Abstract: The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.

Abstract: The present invention relates to the field of data storage, and more particularly to an estimation technology in an error correction process of a flash memory. The present invention provides an error estimation module and an error estimation method thereof for a flash memory. The estimation module mainly includes a timer, a quantification index table, a storage page table, and an error index table. The error estimation method of a flash memory includes: creating rewriting and programming error a priori data, and estimating an error rate of the flash memory by using special physical signals in a flash memory device to provide proper error estimation for an error correction algorithm of the flash memory. The present invention is applicable to a solid-state hard disk controller, a flash memory controller, and the like, where the flash memory device is used as a storage medium, so that the reliability of the flash memory device is improved.

Abstract: Provided is a flash memory controller and a method for transmitting data between flash memories. The method includes: implementing parallel processing in a manner of separating data transmission from error detection processing, and performing delayed acknowledgment on correctness of data transmitted to a target flash memory. In addition, an error detection unit performs correction processing on data in which an error occurs, and performs an update with correct data after correction and overwrites erroneous data in a buffer of the flash memory.

Abstract: Provided are an embedded storage and an embedded storage system. The embedded storage includes a flash memory control unit, a host interface unit, and at least one off-chip flash memory interface unit. The embedded storage system includes the embedded memory and at least one expanded flash memory. The expanded flash memory performs data interaction with the flash memory control unit through the off-chip flash memory interface unit. The embedded storage and the embedded storage system can solve that because an embedded memory does not have an off-chip flash memory interface for connection to an off-chip flash memory, resulting in poor expandability for storage capacity of the embedded memory. A storage cost may further be lowered through a combination of various types of NAND flash memories.

Abstract: The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.

Abstract: The present invention relates to the field of data storage, and more particularly to an estimation technology in an error correction process of a flash memory. The present invention provides an error estimation module and an error estimation method thereof for a flash memory. The estimation module mainly includes a timer, a quantification index table, a storage page table, and an error index table. The error estimation method of a flash memory includes: creating rewriting and programming error a priori data, and estimating an error rate of the flash memory by using special physical signals in a flash memory device to provide proper error estimation for an error correction algorithm of the flash memory. The present invention is applicable to a solid-state hard disk controller, a flash memory controller, and the like, where the flash memory device is used as a storage medium, so that the reliability of the flash memory device is improved.