Abstract: The present invention relates to an RF MEMS switch device comprising: a substrate; a bias electrode positioned on the substrate and supplying bias voltage; a pair of signal electrodes positioned to be spaced-apart each other on the substrate and transmitting an RF signal from one side to the other side; a dielectric layer formed on upper part of the pair of signal electrodes to be overlapped with the pair of signal electrodes; a membrane electrode formed on the dielectric layer to be overlapped with the pair of signal electrodes and the dielectric layer; a bias line connecting between the membrane electrode and the bias electrode; at least one pooling electrode formed to be overlapped with the membrane electrode and having the dielectric layer be interposed therebetween; and a pooling line connecting any one of the pair of signal electrodes and the pooling electrode, and manufacturing method thereof.

Abstract: An electrostatic switch for high frequency and a method for manufacturing the same are disclosed. The electrostatic switch for high frequency in accordance with an embodiment includes: a first substrate module including a first substrate, an electrode part and a pair of CoPlanar Waveguides (CPWs), the electrode part being installed on the first substrate, the pair of CPWs being formed on either side of the electrode part and guiding an RF signal to travel; and a second substrate module being joined to the first substrate module, the second substrate module including a membrane and a bias line, the membrane being installed on a second substrate and bent by bias voltage supplied to the electrode part and being coupled to the pair of CPWs across an upper area of the electrode part in order to be short-circuited to the electrode part, the bias line being connected to the electrode part.

Abstract: Provided is a piezoelectric microphone. The piezoelectric microphone includes a plurality of cells each having a lower electrode, a piezoelectric layer, and an upper electrode. The cells can be arranged on a protection layer in various patterns. Since the piezoelectric microphone includes the plurality of cells, the voltage level of a piezoelectric signal of the piezoelectric microphone can be easily increased to a desired level by adjusting the number of the cells. Thus, the sensitivity of the piezoelectric microphone can be increased.

Abstract: A duplexer includes an FBAR band pass filter that can be easily embodied in single chip. A method for manufacturing the same includes the steps of forming a plurality of recesses in a substrate, forming an insulation layer on the substrate, and forming a plurality of filling-up layers that fill the recesses. The method also includes the step of forming a transmitting bandpass filter and forming a receiving bandpass filter on an upper side of the membrane, with each bandpass filter including at least two film bulk acoustic resonators (FBARs). In addition, the method includes the step of forming a circuit that connects the bandpass filters to an antenna terminal, with this circuit including at least one inductor and capacitor. The method also includes a step of removing the filling-up layers from the recesses in the substrate.

Abstract: A duplexer including an FBAR band pass filter that can be easily embodied in single chip, and a method for manufacturing the same are disclosed. The duplexer of a mobile communication device includes a transmitting band pass filter, formed on an upper portion of a substrate, having at least two FBARs electrically connected to each other, a receiving band pass filter, formed on an other side of the substrate, having at least two FBARs electrically connected to each other, and a page shifter electrically connected with the transmitting band pass filter and the receiving band pass filter. Since the transmitting and receiving band pass filter and the inductor can be integrated into one chip, a duplexer with minimized size can be provided in response to the request of miniaturization and lightness of various mobile communication device.

Abstract: A duplexer including an FBAR band pass filter that can be easily embodied in single chip, and a method for manufacturing the same are disclosed. The duplexer of a mobile communication device includes a transmitting band pass filter, formed on an upper portion of a substrate, having at least two FBARs electrically connected to each other, a receiving band pass filter, formed on an other side of the substrate, having at least two FBARs electrically connected to each other, and a page shifter electrically connected with the transmitting band pass filter and the receiving band pass filter. Since the transmitting and receiving band pass filter and the inductor can be integrated into one chip, a duplexer with minimized size can be provided in response to the request of miniaturization and lightness of various mobile communication device.

Abstract: Provided is a piezoelectric microphone. The piezoelectric microphone includes a plurality of cells each having a lower electrode, a piezoelectric layer, and an upper electrode. The cells can be arranged on a protection layer in various patterns. Since the piezoelectric microphone includes the plurality of cells, the voltage level of a piezoelectric signal of the piezoelectric microphone can be easily increased to a desired level by adjusting the number of the cells. Thus, the sensitivity of the piezoelectric microphone can be increased.

Abstract: A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.

Abstract: A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.