Patents Assigned to MEMSCAP Le Parc Technologique des Fontaines
  • Publication number: 20030161081
    Abstract: An electronic component produced from a substrate and incorporating a capacitive structure formed on top of the final visible metallization level produced in the substrate, said capacitive structure having two electrodes, wherein one of the electrodes comprises an array of superposed fins that are offset from one another with respect to a central trunk, the other electrode comprising two arrays of fins, the fins of each of the latter arrays being interleaved with the fins of the first electrode and being joined together by a common wall, the two common walls themselves being joined together above the first electrode.
    Type: Application
    Filed: February 25, 2003
    Publication date: August 28, 2003
    Applicant: MEMSCAP Le Parc Technologique des Fontaines
    Inventor: Lionel Girardie
  • Publication number: 20030129446
    Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of superposed elementary layers, each with a thickness of less than about 500 Å, among which there are two layers based on an alloy of titanium dioxide (TiO2) and tantalum pentoxide (Ta2O5), these layers being separated by an interlayer of an alloy based on at least hafnium dioxide (HfO2) an alumina (Al2O3).
    Type: Application
    Filed: December 24, 2002
    Publication date: July 10, 2003
    Applicant: MEMSCAP Le Parc Technologique des Fontaines
    Inventor: Lionel Girardie