Patents Assigned to MEMSmart Semiconductor Corp.
  • Patent number: 7935556
    Abstract: A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: May 3, 2011
    Assignee: Memsmart Semiconductor Corp.
    Inventors: Li-Ken Yeh, I-Hsiang Chiu
  • Patent number: 7863063
    Abstract: A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: January 4, 2011
    Assignee: MEMSmart Semiconductor Corp.
    Inventor: Siew-Seong Tan
  • Publication number: 20100109121
    Abstract: A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.
    Type: Application
    Filed: January 5, 2010
    Publication date: May 6, 2010
    Applicant: MEMSMART SEMICONDUCTOR CORP.
    Inventors: Li-Ken YEH, I-Hsiang CHIU
  • Patent number: 7666702
    Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: February 23, 2010
    Assignee: MEMSmart Semiconductor Corp.
    Inventors: Sheng-Hung Li, Siew-Seong Tan, Cheng-Yen Liu, Li-Ken Yeh