Abstract: A solid state comprising: memory cells programmable with threshold voltages, each one associated with a respective bit pattern and variable over the memory cells thereby defining a respective threshold voltage distribution. Each pair of adjacent bit patterns can be discriminated by a respective first reference voltage between the threshold voltages associated with the pair of adjacent bit patterns, and a controller for storing LLR tables; for each bit pattern combination comprising first, second and third bit patterns respectively associated with the first reference voltage, a second reference voltage higher than the first reference voltage, and a third reference voltage lower than the first reference voltage, each LLR table has an error information when that bit pattern combination is associated with respective threshold voltages that, based on the threshold voltage distributions, are inconsistent with each other, or a LLR value otherwise.