Abstract: A thermopile infrared sensor includes a substrate, at least one thermocouple cantilever beam comprising at least one thermocouple, and a suspending membrane. The cantilever beam is formed above the substrate. The cantilever beam has a first end and a second end located away from the first end. The first end is attached to the substrate to form a cold junction. A predetermined distance is formed between the second end and the substrate. The suspending membrane is formed above the cantilever beam and is supported by the second end of the cantilever beam to form a hot junction. The cantilever beam is completely hidden underneath or covered by the suspending membrane. In addition, an integrated circuit, which is underneath the suspending membrane, can be integrated with the thermopile infrared sensor.

Abstract: A thermoelectric sensor device is disclosed consisting of polysilicon, titanium or AlSiCu as the thermocouple of material for thermoelectric sensor device. The features of the present process are: Selecting a material such as aluminum, titanium, aluminum alloy or titanium alloy with lower thermal conductivity coefficient as thermocouple element line and making use of zigzag structure with thermocouple element line, and increasing the length of thermocouple element line. Employing front side Si bulk etching technique to etch the silicon substrate, which is under the device and empty of silicon substrate, so as to reduce the superficial measure of thermoelectric sensor module and increase the throughout of the silicon wafer. Simultaneously, fabricating a resistor to treat as a heater on the membrane for adjusting the device.