Abstract: Apparatus, methods and articles of manufacture are shown for modifying electromagnetic waves. Through using various wave characteristics such as amplitude to regulate a current source, a current is output that may be used in any number of ways, such as driving an antenna or other load.

Abstract: The invention relates to a system for electromagnetic processing of an input wave involving receiving a modified signal derived from two or more signals that represent the input wave when combined; and alternately regulating the modified signal using a digital signal containing at least one characteristic of said two or more signals. The invention may utilize in-phase and quadrature phase signals, where the magnitude portion of the signals may be used for regulating the modified signal. The modified signal may be created by modulating a characteristic of the I, Q signals, such as their sign, with an RF or other frequency carrier wave.

Abstract: A spatial power divider/combiner that comprises: a housing containing a first channel forming three sides of a rectangular input waveguide and a second channel forming three sides of a rectangular output waveguide; a board coupled to the housing, wherein the underside of the board forms the fourth side of the input and output waveguides; a series of slots etched on the underside of the board located in the input waveguide to divide an input signal; a series of slots etched on the underside of the board located in the output waveguide to recombine the divided signal; and a series of microstrip lines printed on the top side of the board to couple the input waveguide and the output waveguide. Additionally, the divider/combiner can comprise a series of active devices, such as MMIC power amplifier, to provide a spatial power amplifier.

Abstract: A sharp control voltage switch utilizing a plurality of field effect transistors (FETs) and a bypass resistance topology to sharpen the control voltage. Utilizing a total of six FETs allows the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.

Abstract: A low control voltage switch utilizing a plurality of field effect transistors (FETs) having a total of six gates to allow the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.

Abstract: The invention is a method and apparatus for determining the shape and location of objects by trilateration based on the output of a plurality of range sensors. The range measurements from a plurality of sensors are correlated with each other to identify one or more potential objects. With respect to each potential object, it is assumed that the object can be one of a finite number of possible predefined shapes. For each potential object, a metric is calculated for each of the predefined shapes using the set of range measurements upon which the potential object is based defining the likelihood that the set of readings correspond to an actual object of that predefined shape. Each potential object is then assumed to have the predefined shape that yielded the lowest metric (i.e., that yielded the metric that indicates the highest likelihood that the object has the corresponding shape). The list of potential objects is then ordered according by their calculated metrics from lowest to highest.

Abstract: A gate biasing circuit including a Schottky barrier diode in series with an ion implanted resistor for use with a baseband MMIC control components such as an MESFET. The diode gate biasing scheme improves the low frequency distortion characteristics of GaAs MESFET control components significantly, allowing microwave power handling and distortion characteristics to be maintained below 100 Hz.