Abstract: A system for distributing alternatively generated power to a real estate development having at least two individual properties includes at least one alternative energy power generator. A distribution station is coupled to the at least one alternative energy power generator. A plurality of real estate properties are coupled to the distribution station. A written instrument associates ownership rights in a portion of the power received from the alternative energy power generator with ownership of at least one of the plurality of real estate properties. A method includes providing a plurality of real estate properties and an alternative energy power generator that forms a cooperative power farm coupled to a distribution station. A credit of power provided from the cooperative power farm to the distribution station is metered. Rights to a portion of the metered credit are included with ownership of at least one of the plurality of real estate properties.

Abstract: An automobile fuel system pressurization apparatus includes an inflatable bladder having a proximal end, a distal end, an exterior surface, and an inlet accessing an interior. The inflatable bladder being deformable between an expanded state and a deflated state. In the expanded state, the exterior surface of the inflatable bladder is configured to provide an air-tight seal in a filler neck of a fuel tank. A pump is coupled to the inlet of the inflatable bladder and is configured to supply air pressure to the interior of the inflatable bladder. A pressure relief valve is disposed at the distal end of the inflatable bladder and is in fluid communication with the interior of the inflatable bladder. When the inflatable bladder is in the expanded state, the pressure relief valve is configured to release a portion of the air pressure from the interior of the inflatable bladder into the fuel tank.

Abstract: A semiconductor chip includes a semiconductor layer having first and second opposing main surfaces. A plurality of MOSFET cells are at least partially formed in the semiconductor layer. A gate pad region is at least partially formed in the semiconductor layer and includes a gate pad contact and a first plurality of trenches extending from the first main surface. The first plurality of trenches are spaced apart from one another in a direction parallel to the first main surface by about 45 micrometers to about 60 micrometers. At least one gate feed region is at least partially formed in the semiconductor layer and includes a gate feed contact and a second plurality of trenches extending from the first main surface. The second plurality of trenches are spaced apart from one another in the direction parallel to the first main surface by about 45 micrometers to about 60 micrometers.