Abstract: The present invention provides a support for temporary bonding a workpiece such as a thick device wafer. The support comprises a carrier having a supporting surface and an isolation film. A first side of the isolation film is bonded to the supporting surface with a peeling strength of from 0.01 to 50.0 g/cm. The invention also provides a method of using the support to e.g. grind the workpiece in making thinned products such as thin silicon wafer, optical lens, thin LCD glass, and thin rock crystal wafer, among others.

Abstract: The present invention provides a procedure of processing a workpiece such as backside grinding of a device wafer and an apparatus designed for the procedure. The procedure comprises (1) preparing a bonded stack comprising (e.g. consisting of) a carrier layer, a workpiece layer, and an interposer layer therebetween; (2) processing the workpiece layer; and (3) delivering a gas jet at the junction between two adjacent layers in the stack to separate or debond the two adjacent layers. Technical merits of the invention include enhanced efficiency, higher wafer throughput, reduced stress on workpiece surface, and uniformly distributed stress and avoidance of device wafer breakage and internal device damage, among others.

Abstract: The present invention provides a method of separating a bonded stack utilizing the force generated by a gas jet. The stack includes a carrier and a thinned workpiece such as device wafer that are bonded together through one or more layers therebetween. The gas jet can separate two adjacent layers having peeling strength therebetween in the range of from 0.01 to 50.0 g/cm. The invention can simplify the procedure and provide high throughput in separating thinned wafer from its carrier.

Abstract: The present invention provides a procedure of processing a workpiece such as backside grinding of a device wafer and an apparatus designed for the procedure. The procedure comprises (1) preparing a bonded stack comprising (e.g. consisting of) a carrier layer, a workpiece layer, and an interposer layer therebetween; (2) processing the workpiece layer; and (3) delivering a gas jet at the junction between two adjacent layers in the stack to separate or debond the two adjacent layers. Technical merits of the invention include enhanced efficiency, higher wafer throughput, reduced stress on workpiece surface, and uniformly distributed stress and avoidance of device wafer breakage and internal device damage, among others.

Abstract: The present invention provides a support for temporary bonding a workpiece such as a thick device wafer. The support comprises a carrier having a supporting surface and an isolation film. A first side of the isolation film is bonded to the supporting surface with a peeling strength of from 0.01 to 50.0 g/cm. The invention also provides a method of using the support to e.g. grind the workpiece in making thinned products such as thin silicon wafer, optical lens, thin LCD glass, and thin rock crystal wafer, among others.