Abstract: A source terminal and a gate terminal are connected to a wiring pattern of the first substrate. A diode is provided under a second substrate such that an anode is connected to a wiring pattern of the second substrate. A plate-like portion of the first electrode is provided between the switching element and the diode, and a linking section of the first electrode connects the plate-like portion and the wiring pattern of the first substrate. A second electrode being substantially columnar and connecting the wiring pattern of the first substrate and the wiring pattern of the second substrate is provided in an opposite side to the linking section with the switching element interposed. A thickness of the plate-like portion of the first electrode is less than or equal to a thickness of each of the wiring pattern of the first substrate and the wiring pattern of the second substrate.

Abstract: First, a three-dimensional substrate is placed such that the rear surface is oriented upward. Next, a translucent member is placed inside a recessed portion so as to cover a through-hole by bringing a first surface of the translucent member into contact with a protruding portion. Next, an element is placed on the rear surface of the three-dimensional substrate so as to cover the recessed portion. Next, a sealing resin is filled between three-dimensional substrate and the element, between the element and a second surface of the translucent member that opposes the first surface, between a side surface of the translucent member and the three-dimensional substrate, and between the first surface of the translucent member and the three-dimensional substrate. In this way, the element and the translucent member are integrated with the three-dimensional substrate.

Abstract: To realize further miniaturization of a semiconductor device. The semiconductor device 10 is provided with a switching element (FET 14) provided on a substrate 18, a first electrode (electrode 13) provided on an opposite side of the substrate 18 interposing the switching element, a diode 12 provided on an opposite side of the switching element interposing the first electrode, and a second electrode (electrode 11) provided on an opposite side of the first electrode interposing the diode 12.