Patents Assigned to Micro Technology Partners
  • Fabricating a semiconductor with an insulative coating
    Patent number: 5521420
    Abstract: An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: May 28, 1996
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores, Wendell B. Sander
  • Method of making a semiconductor device with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
    Patent number: 5455187
    Abstract: An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.
    Type: Grant
    Filed: November 1, 1994
    Date of Patent: October 3, 1995
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores
  • Fabricating a semiconductor with an insulative coating
    Patent number: 5444009
    Abstract: An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure.
    Type: Grant
    Filed: December 23, 1994
    Date of Patent: August 22, 1995
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores, Wendell B. Sander
  • Fabricating a semiconductor with an insulative coating
    Patent number: 5441898
    Abstract: An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure.
    Type: Grant
    Filed: December 29, 1994
    Date of Patent: August 15, 1995
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores, Wendell B. Sander
  • Fabricating a semiconductor with an insulative coating
    Patent number: 5403729
    Abstract: An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure.
    Type: Grant
    Filed: May 27, 1992
    Date of Patent: April 4, 1995
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores, Wendell B. Sander
  • Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
    Patent number: 5280194
    Abstract: An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.
    Type: Grant
    Filed: September 4, 1992
    Date of Patent: January 18, 1994
    Assignee: Micro Technology Partners
    Inventors: John G. Richards, Hector Flores, Wendell B. Sander