Abstract: Disclosed in the present invention are a sensor packaging structure and a manufacturing method thereof. The sensor packaging structure includes a protection board, a circuit structure and a filling structure. A front surface of the circuit structure is connected to a first surface of the protection board. A second surface of the protection board is used as a sensing function surface. The filling structure is located on the outer periphery of the circuit structure and connected to the first surface of the protection board. The sensor packaging structure of the present invention uses the protection board as a protection layer of the functional circuit, which can effectively protect the functional circuit of the sensor. Meanwhile, the protection board is first connected to the circuit structure in the manufacturing method to avoid tolerance accumulation, increasing the manufacturing accuracy of the protection layer.

Abstract: The present invention provides a “C-Q-T” type capacitive fingerprint sensor with an integrator. The integrator comprises an amplifier, an integrating capacitor, a reference voltage and a reset circuit. By applying the present invention, linearity and sensitivity of the “C-Q-T” type capacitive fingerprint sensor are improved. During a conversion process of the “C-Q-T”, through introduction of the integrator, charge transfer quantities between a target capacitor and the integrating capacitor can be consistent for each time, so that a sensing equation is optimized, and better linearity is shown in the conversion process. As influence of a background capacitor and of a bus parasitic capacitor on the sensing equation is removed, the sensitivity of the “C-Q-T” type capacitive fingerprint sensor is improved.

Abstract: On the basis of the physical principle that a capacitance value is inversely proportional to the distance between capacitive electrodes, the spatial structure of the surface of an object can be imaged by measuring a coupling capacitance between the surface of measured object and the electrode arrays on a surface of a sensor; for example, imaging may be performed to uneven spaces between ridge lines and valley lines of fingerprints. The present application provides a C-Q-T type capacitive fingerprint sensor. Firstly, coupling capacitance differences between the fingerprints and the electrodes of the sensor are converted into charge quantity differences, then the charge quantity differences are converted into time differences, and edge signals carrying the time differences are output. Fingerprint sensors are grouped into an array, reading and data combination may be performed to the edge signals, and imaging may be performed to fingerprints.