Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.
Type:
Grant
Filed:
April 24, 1995
Date of Patent:
May 13, 1997
Assignees:
Microelectronics and Computer Corporation, SI Diamond Technology, Incorporated
Inventors:
Chenggang Xie, Nalin Kumar, Howard K. Schmidt