Abstract: An electrical circuit includes at least two unit cells configured on a planar substrate which extends in one plane. The unit cells respectively have at least two contact points with a different function and include at least one dielectric layer disposed on the substrate and/or on the unit cells and at least two contact surfaces which are disposed parallel to the plane above the contact points and/or the substrate. The contact points with the same function are connected electrically to at least one common contact surface for at least a part of the contact points of the same function via at least one through-contacting through the dielectric layer and able to be contacted in common from outside via the corresponding contact surfaces.

Abstract: A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said component being constructed for its part on the basis of semiconductors with a large band gap (wide-gap semiconductor). The sensitive surface is provided at least in regions with a functional layer sequence which has an ion-sensitive surface. The functional layer sequence has at least one layer which is impermeable at least for the medium and/or the materials or ions to be determined.

Abstract: An electronic component has at least one contact surface situated in a contact plane, at least one insulating layer disposed above the contact plane, at least one stabilizing layer disposed on the insulating layer for increasing a mechanical stability of the component, and at least one of a bonding contact and a soldering contact. The insulating layer and the stabilizing layer have at least one opening which opens in an upper side of the stabilizing layer. The upper side of the stabilizing layer is oriented away from the contact surface. The opening extends through the stabilizing layer and the insulating layer as far as the contact surface. The at least one of a bonding contact and a soldering contact extends over the stabilizing layer and touches the contact surface through the opening.

Abstract: A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.

Abstract: A semiconductor component includes a substrate, at least one oblong first electrode disposed on the substrate and at least one second electrode disposed on the substrate. The first and/or the second electrode respectively are closed in its longitudinal direction.

Abstract: The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.

Abstract: The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.