Patents Assigned to Microlink Devices, Inc.
  • Low emitter resistance contacts to GaAs high speed HBT
    Publication number: 20030025128
    Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipolar transistor to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
    Type: Application
    Filed: July 22, 2002
    Publication date: February 6, 2003
    Applicant: MicroLink Devices, Inc.
    Inventors: Noren Pan, Byung-Kwon Han
  • Graded base GaAsSb for high speed GaAs HBT
    Publication number: 20030025179
    Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a graded base layer formed from antimony. The graded base allows the heterojunction bipolar transistor to establish a quasi-electric field to yield an improved cutoff frequency.
    Type: Application
    Filed: July 22, 2002
    Publication date: February 6, 2003
    Applicant: MicroLink Devices, Inc.
    Inventors: Noren Pan, Byung-Kwon Han