Patents Assigned to Micron Technolog, Inc.
  • Patent number: 9276568
    Abstract: A reference voltage (Vref) generator for a single-ended receiver in a communication system is disclosed. The Vref generator in one example comprises a cascoded current source for providing a current, I, to a resistor, Rb, to produce the Vref voltage (I*Rb). Because the current source isolates Vreffrom a first of two power supplies, Vref will vary only with the second power supply coupled to Rb. As such, the Vref generator can be used in systems employing signaling referenced to that second supply but having decoupled first supplies. For example, in a communication system in which the second supply (e.g., Vssq) is common to both devices, but the first supply (Vddq) is not, the disclosed Vref generator produces a value for Vref that tracks Vssq but not the first supply.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: March 1, 2016
    Assignee: Micron Technolog, Inc.
    Inventor: Timothy M. Hollis
  • Patent number: 7544559
    Abstract: The invention includes methods of forming PMOS transistors and NMOS transistors. The NMOS transistors can be formed to have a thin silicon-containing material between a pair of metal nitride materials, while the PMOS transistors are formed to have the metal nitride materials directly against one another. The invention also includes constructions which contain an NMOS transistor gate stack having a thin silicon-containing material between a pair of metal nitride materials. The silicon-containing material can, for example, consist of silicon, conductively-doped silicon, or silicon oxide; and can have a thickness of less than or equal to about 30 angstroms.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: June 9, 2009
    Assignee: Micron Technolog, Inc.
    Inventors: D. V. Nirmal Ramaswamy, Venkatesan Ananthan