Abstract: The present disclosure relates to operating an array of memory cells, including storing user data in a plurality of memory cells of the memory array, storing parity data associated with the user data in parity cells of the memory array, in which a number of used parity cells is selected based on a status of the memory cells and is related to a selected Error Correction Code (ECC) correction capability, and performing an ECC operation on the plurality of memory cells, the ECC correction capability being based on the selected number of used parity cells. Related memory devices and systems are also herein disclosed.

Abstract: A system includes a non-volatile memory device and a processing device to perform operations including creating a logical transfer unit (LTU) corresponding to a logical block address (LBA) received in a read request, wherein the LTU comprises a subset of a plurality of sequential LBAs of a zone of LBA space of the non-volatile memory device, wherein one of the subset is the LBA. The processing device comprises a hardware accelerator to perform operations comprising: retrieving, using an LTU identifier associated with the LTU, metadata that specifies a mapping between the LTU identifier and a physical address of a physical address space; and providing the metadata for use in determining and utilizing the physical address to perform a read operation specified by the read request.

Abstract: A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insulative structures, forming strings of memory cells through the first stack structure, forming a second stack structure over the first stack structure, based at least partially on observed amount of pillar bending within the first stack structure, forming a first tailored reticle specific to the observed amount of pillar bending, utilizing the first tailored reticle to form openings extending through the second stack structure and over some of the strings of memory cells, wherein centers of the openings over the strings of memory cells are at least substantially aligned with the centers of uppermost surfaces of the strings of memory cells in a direction of the observed pillar bending, and forming upper pillars extending through the second stack structure and over some of the strings of memory cells.

Abstract: Methods, systems, and devices for robust functionality for memory management associated with high-temperature storage are described. A memory device may apply a pattern (e.g., an imprint conditioning or deletion pattern) to at least a portion of memory cells of a memory array associated with a memory device before or after a power state procedure. The memory device may determine the pattern from various possible patterns, where the pattern may indicate a data state for each memory cell of the portion of memory cells. The pattern may indicate a same data state for each memory cell, an alternating data state for each memory cell, or an asymmetric switching pattern over a plurality of cycles, or any combination thereof. The memory device may write a respective logic value to at least some of the one or more memory cells of the portion of memory cells according to the pattern.

Abstract: Methods and apparatus for performing multi-step image processing using a reconfigurable fabric device (RFD) in place of multiple discrete ICs. In one embodiment, the methods and apparatus operate according to a flexible time-divided schedule, and the processing is configured to process image sensor data by at least: (i) receiving RAW image data, programming an RFD to operate as a first functional unit such as an image signal processor (ISP), using the programmed RFD to perform image signal processing on the RAW image data, storing the ISP-result in temporary memory; and (ii) programming the RFD to operate as a second functional unit (e.g., deep learning accelerator (DLA)), using the programmed RFD to read out ISP-result from the temporary memory, perform deep learning processing on the ISP-result, and storing the DLA-result back into the temporary memory. In one variant, an on-die controller and memory are used in support of the RFD operations, thereby enabling a single-die processing solution.

Abstract: Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.

Abstract: A memory sub-system, such as a solid-state drive, configured to map a write stream to superblocks without the stream identifying a zone having a predetermined size in a namespace. The memory sub-system is configured to maintain, for the stream, a cursor configured to identify one of the plurality of superblocks as being reserved entirely for the stream; map, based on a superblock identified by the cursor, logical addresses of write commands in a contiguous segment of the stream to physical addresses in the superblock until the superblock is full; store data of write commands in the stream into based on mapping from logical addresses to physical addresses identified via the cursor; and allocate, for the cursor and in response to the superblock identified by the cursor being full, a free superblock available to continue mapping logical addresses to physical address.

Abstract: Systems, methods and apparatuses to configure a computing device for identification and authentication are described. For example, a key management server (KMS) has a certificate generator and is coupled to a registration portal. A copy of secret implemented into a secure component during its manufacture in a factory is stored in the KMS. After leaving the factory, the component can be assembled into the device. The portal receives registration of the component and a hash of software of the device. The certificate generator generates, independent of the device, public keys of the device, using the copy of the secret stored in the KMS and hashes of the software received via the registration portal, and then sign a digital certificate of the public key of the device. Authentication of the device can then be performed via the private key of the device and the certified public key.

Abstract: The disclosed embodiments are directed to preventing the writing of malformed cryptographic keys to a memory device. In one embodiment, a system is disclosed comprising a storage array, the storage array storing a first cryptographic key; and a processor configured to: receive a command from a host processor, the command including a second cryptographic key, a first signature, a second signature, and at least one field, determine that the first signature is valid using the second cryptographic key and the at least one field, determine that the second signature is valid using the first cryptographic key, the first signature and the at least one field, and replace the first cryptographic key with the second cryptographic key after determining that both the first signature and second signature are valid.

Abstract: According to one or more embodiments of the disclosure, an alignment-overlay mark is provided. The alignment-overlay mark includes a pair of first marks and a plurality of second marks. The first marks extend in a first direction and are arranged in parallel to each other in a second direction. The second direction is perpendicular to the first direction. The second marks are between the first marks, extend in the second direction and are arranged in parallel to each other in the first direction.

Abstract: There are provided systems and methods that include at least one memory that has a plurality of memory cells. The cells may be disposed in rows and columns. The device can further include a controller that is communicatively coupled to the at least one memory, and the controller may be configured by its hardware topology and its instruction set and/or by a communicatively coupled processor or higher level system or subsystem to maintain data integrity in the at least one memory and/or to prevent or mitigate malicious access patterns that may compromise the at least one memory. The controller may be configured to execute a deterministic protocol in conjunction with or sequentially to a probabilistic protocol to achieve one or more of the above-noted functions.

Abstract: Methods, systems, and devices for memory management procedures for write boost mode are described. A memory system may receive a command to write data. The memory system may write the data to a first location of the memory system using a first mode for storing one bit per memory cell based on receiving the command. The memory system may select a first portion of the data to rewrite to the memory system using a second mode for storing two or more bits per memory cell based on one or more parameters satisfying one or more thresholds. The memory system may write the first portion of the data to a second location of the memory system using the second mode based on selecting the first portion of the data. The memory system may maintain a second portion of the data at the first location of the memory system.

Abstract: Apparatuses, computer implemented methods and non-transitory computer-readable media storing instructions to implement simulating topological features of layout designs are disclosed. An example method includes: receiving information about the layout design including topological parameters in a verification area; defining a width and a length in first and second direction directions of one or more windows; defining first and second step sizes independently from the width and the length in the first and second directions for the one or more windows, the first step size being a distance between adjacent central points of the one or more windows in the first direction and the second step size being a distance between adjacent central points of the one or more windows in the second direction; extracting information about the layout design in the one or more windows at each of a plurality of window locations; and storing the information in a database.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple to conductor material of the conductor tier. The insulative tier immediately-above a lowest of the conductive tiers comprises a lower first insulating material and an upper second insulating material above the upper first insulating material. The upper second insulating material is of different composition from that of the lower first insulating material. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. Other embodiments, including method, are disclosed.

Abstract: Memory devices receive refresh management (RFM) commands and perform a targeted refresh operation responsive to the RFM command. Certain conflicts may occur if the RFM command is received while the memory is performing certain operations. An RFM entry circuit receives the RFM command at a first time and then provides an internal RFM signal at a second time. The second time may be the next time a row activation or refresh is performed after receiving the RFM command. The targeted refresh operation is performed responsive to the internal RFM signal.

Abstract: According to one or more embodiments of the disclosure, an apparatus comprises a memory device and a bias temperature instability (BTI) controller. The BTI controller generates and outputs a command and address signal for memory testing. The command and address signal causes the memory device in the idle state to operate for the testing.

Abstract: As described herein, an apparatus may include a memory that includes a first portion, a second portion, and a third portion. The apparatus may also include a memory controller that includes a first logical-to-physical table stored in a buffer memory. The memory controller may determine that the first portion is accessed sequential to the second portion and may adjust the first logical-to-physical table to cause a memory transaction performed by the memory controller to access the third portion as opposed to the first portion.

Abstract: Methods, systems, and devices for commanded device states for a memory system are described. For example, a memory system may be configured with different device states that are each associated with a respective allocation of resources (e.g., feature sets) for operations of the memory system. Resource allocations corresponding to the different device states may be associated with different combinations of memory management configurations, error control configurations, trim parameters, degrees of parallelism, or endurance configurations, among other parameters of the memory system, which may support different tradeoffs between performance characteristics of the memory system. A host system may be configured to evaluate various parameters of operating the host system, and to transmit commands for a memory system to enter a desired device state of the memory system.

Abstract: In some implementations, a memory device may determine, from a list of key-value pair sets, a key-value pair set. The memory device may identify, from the key-value pair set selected from the list of key-value pair sets, a first key that is included in at least one other key-value pair set from the list of key-value pair sets. The memory device may identify, from the key-value pair set selected from the list of key-value pair sets, a second key that is not included in at least one other key-value pair set from the list of key-value pair sets. The memory device may form a new key-value pair set that excludes the first key and includes the second key. The memory device may replace the key-value pair set selected from the list of key-value pair sets with the new key-value pair set.