Abstract: A memory device includes a data write circuitry. The data write circuitry is configured to capture a first write command received via an external input/output (I/O) interface. The data write circuitry is further configured to generate a first internal write start (InternalWrStart) in a data strobe (DQS) domain after capture of the first write command. The data write circuitry is additionally configured to write a first one or more data bits into at least one memory bank based on the first InternalWrStart, wherein the first InternalWrStart is generated internally in the memory device.
Type:
Grant
Filed:
November 21, 2019
Date of Patent:
November 10, 2020
Assignee:
Micron Technology, P.C.
Inventors:
Daniel B. Penney, David R. Brown, Gary L. Howe