Patents Assigned to Micron Technolohy, Inc.
  • Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
    Patent number: 7433227
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: October 7, 2008
    Assignee: Micron Technolohy, Inc.
    Inventors: Kristy A. Campbell, Jon Daley, Joseph F. Brooks