Patents Assigned to Microng Technology, Inc.
  • Methods of forming semiconductor-on-insulator constructions
    Patent number: 7494901
    Abstract: The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
    Type: Grant
    Filed: April 5, 2002
    Date of Patent: February 24, 2009
    Assignee: Microng Technology, Inc.
    Inventor: Chandra Mouli