Abstract: A method of forming emitter tips for use in a field emission array is disclosed. The tips are formed by utilizing a polymer residue that forms during the dry etch sharpening step to hold the mask caps in place on the emitter tips. The residue polymer continues to support the mask caps as the tips are over-etched, enabling the tips to be etched past sharp without losing their shape and sharpness. The dry etch utilizes an etchant comprised of fluorine and chlorine gases. The mask caps and residue polymer are easily removed after etching by washing the wafers in a wash of deionized water, or Buffered Oxide Etch.

Abstract: The invention includes methods of forming a non-volatile resistance variable device and methods of forming a metal layer comprising silver and tungsten. A method of forming a non-volatile resistance variable device includes forming a chalcogenide material over a semiconductor substrate. First and second electrodes are formed operably proximate the chalcogenide material. At least one of the first and second electrodes includes a metal layer having silver and tungsten. The metal layer is formed by providing the substrate within a sputter deposition chamber. One or more target(s) is/are provided within the chamber which include(s) at least tungsten and silver. The one or more target(s) is/are sputtered using a sputtering gas comprising at least one of Xe, Kr and Rn under conditions effective to deposit the metal layer onto the substrate. The metal layer can be fabricated independent of fabrication of a non-volatile resistance variable device.

Abstract: An apparatus which reduces the surface area with which a carrier film adheres to a die, including a plate member including laterally spaced supports preferably, the apparatus also includes a vacuum source operatively connected to the plate member Upon placement of a carrier film having an array of semiconductor diet adhered thereto onto the plate member, the dice are proximate the supports. The vacuum pulls air from the spaces between the supports, which partially releases the carrier film from the bottom surface of at Least sonic of the dice. The apparatus may also include a die removal mechanism such as a vacuum toilet type die pick-up mechanism, an extendable member die plunge-dip mechanism, or a combination thereof. The present invention also includes a method for reducing the surface area with which a carrier film adheres to a die to facilitate removal thereof.

Abstract: A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, covering the alternating layers with an etch-resistant material, and etching the alternating layers, thereby forming a capacitor structure having corrugated sides.

Abstract: An apparatus and method for dynamically centering a setup-time and hold-time window. An access window defined by a setup-time and a hold-time is determined. A determination is made whether the access window is centered about a centerline. The centerline is a point between a predetermined setup-time limit and a predetermined hold-time limit. A dynamic access window centering process is performed in response to the determination that the access window is not centered about the centerline. The dynamic access window centering process includes: determining that the access window has shifted from the centerline; and providing at least one of a dynamic delay and a dynamic speed-up of the access window based upon the determination that the access window has shifted from the centerline.

Abstract: Methods for forming platinum-iridium films, particularly in the manufacture of a semiconductor device, and devices (e.g., capacitors, integrated circuit devices, and memory cells) containing such films.

Abstract: Power consumption by a memory device is optimized by maintaining data input buffers in an off state until a command sequence containing a write command is received by the memory. A software command sequence is provided to the memory device where the software command sequence was constructed by generating a command sequence of n cycles and providing valid data in each cycle in which a write command is generated after a mth cycle of the command sequence, where m is less than n. The data input buffers are returned to an off state upon completion of a program or erase operation defined in the received command sequence.

Abstract: An integrated circuit includes a reset connection to reset the device in response to an externally provided signal. The reset connection is used during test operations to receive elevated supply voltages. The reset connection is coupled to a bias circuit to maintain an inactive state such that the integrated circuit is not reset during the test operation when the reset connection is not actively driven by the external supply.

Abstract: A pressure-regulating device for use with a vapor reaction chamber, and methods of its use, are disclosed. In one embodiment according to the invention, the device comprises a magnetically-actuatable valve having an aperture, a plug containing a plug magnet within the valve, a magnet disposed around the valve and magnetically associated with the plug magnet, and an actuator associated with the magnet. The actuator moves the magnet to magnetically bias the plug magnet thereby moving the plug into and out of sealing engagement with the aperture and regulating pressure within the reaction chamber. Plug movement is achieved without interconnecting mechanical parts disposed through the body of the valve that provide surfaces on which adduct, from depositing vaporous by-product material, can accumulate. Since magnetic interaction moves the plug rather than mechanical parts attached to the valve body, build-up of adduct on the internal surfaces of the valve is reduced.

Abstract: The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

Abstract: A memory device includes memory cells arranged in multiple blocks. A register is provided to track multiple open pages per block of the memory. In one embodiment, the register is located in the memory device and used to determine if a memory access is to be performed. In another embodiment, the register is located external to the memory and used by a processor and/or chip set to determine if an access request is needed.

Abstract: A process of making an electrical coupling stack is disclosed. A conductive structure is coupled to a substrate. The coupling includes a crystalline salicide first structure above the conductive structure, a nitrogen-containing amorphous salicide second structure above the crystalline salicide first structure, and a refractory metal third film above the nitrogen-containing amorphous salicide second structure. Processing includes depositing a refractory metal silicide first film over the conductive structure, depositing a refractory metal nitride second film over the refractory metal silicide first film, and depositing the refractory metal third film over the refractory metal nitride second film. Thermal processing is carried out to achieve the electrical coupling stack.

Abstract: An integrated circuit has been described that includes a user programmable identification code register. The register can be programmed by the user to emulate other integrated circuit devices. The integrated circuit register can also be reset to reflect the original manufacturer information. The integrated circuit can be a memory device and allows the user to upgrade a system while indicating to the original system that the device is compatible.

Abstract: Method and apparatus for the erase of non-volatile memory in which holes trapped in the tunnel oxide are reduced.

Abstract: A packaged assembly including an interposer or substrate supporting on a first side thereof a chip that is encased with an encapsulant is described. A second side of the interposer or substrate includes a barrier that blocks the flow of encapsulant to create a uniform encapsulant edge on the second side of the interposer. The uniform edge helps prevent flaking of the encapsulant off the interposer. The packaged assembly is adapted to be used with a further electronic device to expand the capablilities of the further electronic device.

Abstract: A stacked assembly of integrated circuit semiconductor devices includes a stack of integrated circuit semiconductor devices supported by a printed circuit board (PCB). One or more multiconductor insulating assemblies provide an interface between terminals of the integrated circuit semiconductor devices and external circuitry.

Abstract: A processing system optimized for data string manipulations includes data string execution circuitry associated with a bus interface unit or memory controller. Cache coherency is maintained, and data move and compare operations may be performed efficiently on cached data. A barrel shifter for realignment of cached data during move operations and comparators for comparing a test data string to cached data a cache line at a time may be provided.

Abstract: A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank.

Abstract: A method of finding an unknown value from within a range of values is disclosed that divides the range into weighted subranges and then, beginning with an arbitrary search value within the range, performs a number of simple comparisons to determine the value for each subrange that will result in a match with the target value. This method can also detect those cases where the target value lies outside the range. In one embodiment, the method of finding an unknown value within a range of values is applied to impedance matching. In this embodiment, the output impedance of a pin on an integrated circuit is automatically matched to the impedance of the load connected to it. The output driver has a controllable impedance that can be adjusted within a specific range of impedances to match the external load impedance it is to drive.