Abstract: A method for preparing a positive photoresist substrate composite is provided which can be used in the presence or absence of atmospheric moisture. There is used a major amount of a commercially available resin, such as a novolak, a dissolution inhibitor with thermally labile t-butyl ether or ester groups, and an aryl onium salt.

Abstract: A positive photoresist composition is provided which can be used in the presence or absence of atmospheric moisture. There is used a major amount of a commercially available resin, such as a novolak, a dissolution inhibitor with thermally labile t-butyl ether or ester groups, and an aryl onium salt.

Abstract: Spin castable mixtures are provided which are useful for applying onto photoresist surfaces to produce a contrast enhancement layer employing .alpha.-alkyl-N-alkyl nitrones in combination with an inert organic binder and solvent. The .alpha.-alkyl-N-alkyl nitrones can be used with 200-300 nanometers UV light.

Abstract: The image of an object with opaque and transparent regions having a contrast less than the contrast threshold of a layer of photoresist when light of a predetermined wavelength to which the photoresist is sensitive is passed through the object and onto the layer of photoresist is enhanced in contrast by the provision of a contrast enhancing layer contiguous to the surface of the photoresist to a value above the contrast threshold of the photoresist. The contrast enhancing layer is constituted of an aryl nitrone compound mixed with a suitable binder.

Abstract: Contrast enhancement compositions are provided which can be used to make contrast enhancement layer photoresist composites. The composites can be used to make patterned photoresists under mid-UV light and utilize photobleachable alkylnitrones.

Abstract: Contrast enhancement compositions are provided which can be used to make contrast enhancement layer photoresist composites. The composites can be used to make patterned photoresists under mid-UV light and utilize photobleachable alkylnitrones.

Abstract: Diaryinitrones are provided which are useful for near UV photolithography.

Abstract: There is provided a siloxane-imide copolymer composition having at least one polymeric block with a low glass transition temperature and at least one polymeric block with a high glass transition temperature.

Abstract: A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photon (e.g. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.