Abstract: A new system and method for measuring RDSon, RDSoff and current collapse on semiconductor devices is provided. The system and method operate by measuring the current flow through the transistor, instead of measuring the voltage across the device under test. The viewing resistor gives us an accurate picture of the RDSon, RDSoff and current collapse recovery curve because it is on the same current path as the device under test.
Type:
Grant
Filed:
July 8, 2024
Date of Patent:
July 14, 2026
Assignee:
MICROTESTERS, LLC
Inventors:
Andre Claude Olivier, Nicholas Emil Olivier, William Dopson