Patents Assigned to MicroXact, Inc.
  • Method of fabrication of the memristive device
    Patent number: 8501621
    Abstract: Three-dimensionally spatially localized artificial filament in the active layer of the memristive device formed by means of ion implantation through the top electrode structure provide the means to achieve high repeatability and high reliability of the memristive devices, leading to significantly improved manufacturing yield. The memristive devices fabricated according to the disclosed method of fabrication can be used in data storage, signal processing and sensing applications.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: August 6, 2013
    Assignee: MicroXact, Inc.
    Inventor: Vladimir Kochergin