Abstract: A laser system includes a laser resonator cavity having a resonant axis and a lasing element within the laser resonator cavity. The lasing element emits, under stimulation, light at a wavelength of from about 1.6 to about 2.3 micrometers. There is a flash lamp, laser diodes or other pumping devices, which optically pump the lasing element to emit laser light. A Q-switch crystal lies along the resonant axis within the laser resonator cavity. The Q-switch crystal is formed of a host material having a concentration of Ho.sup.3+ ions therein, so as to be a saturable absorber of light of a wavelength of about 2.0-2.1 micrometers. The Q-switch crystal is preferably Ho.sup.3+ -doped yttriumlithium-fluoride, or Ho.sup.3+ -doped yttrium-vanadate. In another embodiment, the Q-switch crystal is preferably Cr.sup.2+ :fosterite (Mg.sub.2 SiO.sub.4).