Abstract: Provided are a wafer heating and holding mechanism for a rotary table, a wafer heating method for a rotary table, and a wafer rotating and holding device with which a wafer put on a rotary table can be heated while being rotated stably under a state in which an in-plane temperature distribution of the wafer is maintained. The wafer heating and holding mechanism for a rotary table of a wafer rotating and holding device comprises: a rotary shaft; a rotary table placed on an end of the rotary shaft and configured to hold a wafer on an upper surface of the rotary table; a drive motor configured to supply motive power to the rotary shaft; and a heater provided above the rotary table and below the wafer while avoiding contact with the wafer to heat the wafer.

Abstract: Provided are a wafer holding mechanism for a rotary table and a method and a wafer rotating and holding device, which enable change of a holding position of the wafer during spin processing while maintaining the posture of the wafer, enable reduction of marks of outer peripheral pins due to etching, and enable reduction of insufficient cleaning or uneven cleaning. The wafer holding mechanism for a rotary table comprises a rotary table configured to hold a wafer on an upper surface thereof, and a plurality of movable outer peripheral pins provided in the rotary table and configured to hold an outer periphery of the wafer. The plurality of movable outer peripheral pins comprise a plurality of first movable outer peripheral pins and a plurality of second movable outer peripheral pins configured to hold the wafer at positions different from positions at which the wafer is held by the first movable outer peripheral pins.

Abstract: Provided are a contactless electric power supply mechanism and method for a rotary table, and a wafer rotating and holding device, which enable a load connected to the rotary table of the wafer rotating and holding device to be contactlessly supplied with electric power. The contactless electric power supply mechanism for a rotary table of a wafer rotating and holding device comprises: a rotary shaft; a rotary table, which is placed on an end of the rotary shaft, and is configured to hold a wafer on an upper surface of the rotary table; a drive motor configured to supply motive power to the rotary shaft; a fixed-side primary coil wound around the rotary shaft; an electric power supply source connected to the fixed-side primary coil; a rotary table-side secondary coil, which is provided so as to correspond to the fixed-side primary coil and be separated from the fixed-side primary coil by a predetermined distance, and is mounted to the rotary table; and a load connected to the rotary table-side secondary coil.

Abstract: Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.

Abstract: The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.

Abstract: The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.

Abstract: Provided are: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric conversion efficiency, and stable in an etching rate and a pyramid shape, which is capable of uniformly forming a fine uneven structure with desired size suitable for a solar cell on the surface thereof; a semiconductor substrate for solar application having a uniform and fine pyramid-shaped uneven structure in a plane; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure, which has a high stability at initial use. The process comprises etching a semiconductor substrate with the use of an alkaline etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, salts thereof, and silicon, to thereby form an uneven structure on the surface of the semiconductor substrate.

Abstract: Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof, and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate.

Abstract: The present invention provides a single wafer processor structured such that similar immersion treatment to the conventional immersion treatment can be performed in the spin treatment, that a consumption of the chemical solutions can be reduced in the chemical solution treatment per wafer, that energy saving can be realized by using reaction heat of the chemical solutions to eliminate a necessity of a heating heater, that a problem of deterioration of the chemical solutions can be eliminated since the blending of the chemical solutions is implemented on the rotary disk part and the chemical solutions are used immediately thereafter, and that the maximum effective point of the chemical solutions can be utilized.

Abstract: There are provided a spin processing method and a spin processing apparatus with which the improvement of a processing speed in spin processing can be compatible with the saving of a processing solution. The spin processing method comprises holding and fixing the wafer on the upper surface of the spin table, and supplying the processing solution to the surface of the wafer by the predetermined amount while rotating the spin table, to process the surface of the wafer, wherein the processing solution is supplied while the wafer is heated and maintained at the predetermined temperature, to process the wafer. The predetermined temperature for heating the wafer is equal to or higher than 25° C.

Abstract: According to the present invention, when performing spin treatment on a square wafer for a solar battery, it is possible to prevent the treatment medium, which is caused to flow down onto the surface of the wafer and scattered to the outside of the wafer from the four sides thereof in droplets, from reaching the back surface of the wafer.

Abstract: It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L?) shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A?) or (B-B?) of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L?) shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

Abstract: Provided is a wafer rotary holding apparatus by which a reduced pressure is created on an upper surface of a rotary disk by a simple and easy-to-make mechanism with no need of any of a vacuum source apparatus, a compressed air supply apparatus, a compressed gas supply apparatus and other apparatuses in use; a wafer can be held while rotating with no contact to a rear surface thereof; a degree of pressure reduction can be adjusted with ease and even a thin wafer (of 0.1 mm or less in thickness) can be held while rotating with no deformation; and the wafer with a bowing can be held while rotating with no correction of the bowing. A wafer rotary holding apparatus includes: a rotary disk on which a fluid flow path is formed; a through hole formed in a central section of the rotary disk; and a plurality of wafer rests provided on an upper surface of the rotary disk.

Abstract: Provided is a wafer rotary holding apparatus by which a reduced pressure is created on an upper surface of a rotary disk by a simple and easy-to-make mechanism with no need of any of a vacuum source apparatus, a compressed air supply apparatus, a compressed gas supply apparatus and other apparatuses in use; a wafer can be held while rotating with no contact to a rear surface thereof; a degree of pressure reduction can be adjusted with ease and even a thin wafer (of 0.1 mm or less in thickness) can be held while rotating with no deformation; and the wafer with a bowing can be held while rotating with no correction of the bowing. A wafer rotary holding apparatus includes: a rotary disk on which a fluid flow path is formed; a through hole formed in a central section of the rotary disk; and a plurality of wafer rests provided on an upper surface of the rotary disk.

Abstract: Provided is a wafer rotary holding apparatus by which a reduced pressure is created on an upper surface of a rotary disk by a simple and easy-to-make mechanism with no need of any of a vacuum source apparatus, a compressed air supply apparatus, a compressed gas supply apparatus and other apparatuses in use; a wafer can be held while rotating with no contact to a rear surface thereof; a degree of pressure reduction can be adjusted with ease and even a thin wafer (of 0.1 mm or less in thickness) can be held while rotating with no deformation; and the wafer with a bowing can be held while rotating with no correction of the bowing. A wafer rotary holding apparatus includes: a rotary disk on which a fluid flow path is formed; a through hole formed in a central section of the rotary disk; and a plurality of wafer rests provided on an upper surface of the rotary disk.

Abstract: A system for reusing water soluble slurry waste fluid wherein separated available abrasive grains and extracted water soluble coolant are reused. This system is capable of reducing a disposal cost due to a reduction of a load to a waste water disposal plant by effectively reusing water soluble slurry waste fluid, and making a contribution to a reduction of a total slicing cost by reusing abrasive grains and water soluble coolant.

Abstract: A wire saw for slicing a semiconductor single crystal ingot with which alignment of the crystallographic orientation of the ingot is simple and easy in a slicing process and a method for slicing the ingot by means of the wire saw. Main rollers are three-dimensionally arranged with a predetermined distance between each other, and a wire runs over the main rollers to form arrays of wire portions parallel to each other, with said wire saw an ingot being sliced into rods by pressing it to an array of wire portions between a pair of main rollers that are used to slice the ingot, while the wire is being driven and slurry is fed to the array of wire portions between the pair of main rollers, wherein the wire runs over the pair of main rollers used for slicing in a ratio of one turn over the pair of main rollers to more than one turn over the other main roller or rollers so that the array of wire portions running over the pair of main rollers used for slicing can be arranged at a desired pitch.

Abstract: A wire saw for slicing a semiconductor single crystal ingot with which alignment of the crystallographic orientation of the ingot is simple and easy in a slicing process and a method for slicing the ingot by means of the wire saw. Main rollers are three-dimensionally arranged with a predetermined distance between each other, and a wire runs over the main rollers to form arrays of wire portions parallel to each other, with said wire saw an ingot being sliced into rods by pressing it to an array of wire portions between a pair of main rollers that are used to slice the ingot, while the wire is being driven and slurry is fed to the array of wire portions between the pair of main rollers, wherein the wire runs over the pair of main rollers used for slicing in a ratio of one turn over the pair of main rollers to more than one turn over the other main roller or rollers so that the array of wire portions running over the pair of main rollers used for slicing can be arranged at a desired pitch.