Abstract: A porous ceramic film having micropores of uniform diameter is formed on a substrate by depositing on the substrate a layer of a ceramic sol containing polyethylene glycol or polyethylene oxide and then heating the substrate. This porous ceramic film is used as a catalyst or catalyst support. When the ceramic of this film is titanium oxide, the film is particularly useful as a photocatalyst for the decomposition of harmful and malodorous substances.
Type:
Grant
Filed:
December 8, 1994
Date of Patent:
September 4, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.
Type:
Grant
Filed:
March 16, 1999
Date of Patent:
August 28, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A method of forming a film of ultrafine particles includes the steps of accelerating ultrafine particles within a vacuum chamber to cause them to collide with a substrate and be deposited, and, at least before said ultrafine particles collide with said substrate, irradiating the ultrafine particles and the substrate with an ionic, atomic or molecular beam or low-temperature plasma or other high-speed, high-energy beam of high-energy atoms or molecules, whereby the surfaces of the ultrafine particles and substrate are activated without being fused, thus promoting bonding between said ultrafine particles and substrate or between the ultrafine particles to form a dense deposit that has good film properties and good adhesion to the substrate while maintaining the crystal properties of the ultrafine particles.
Type:
Grant
Filed:
July 26, 1999
Date of Patent:
August 28, 2001
Assignee:
Agency of Industrial Science and Technology Ministry of
International Trade and Industry
Abstract: A method of fabricating Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a Cu&agr;(InxGa1−x)&bgr;(SeyS1−y)&ggr; film. Simultaneously with the supplying of Cu, In, Ga, Se and S, the substrate is supplied with water vapor or a gas that contains a hydroxyl group.
Type:
Grant
Filed:
October 8, 1999
Date of Patent:
August 28, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Inventors:
Shigeru Niki, Akimasa Yamada, Paul Fons, Hiroyuki Oyanagi
Abstract: An angle compensation method compensates for the angle of the light-receiving surface of a photodiode disposed in an inclination detection device. The light-receiving surface is divided into four parts by an a-axis and a b-axis disposed perpendicular to each other and receives light reflected from an object surface that is an X-Y plane. The inclination detection device seeks the inclination of the object surface from changes in the irradiation position of the light reflected onto the photodiode light-receiving surface.
Type:
Application
Filed:
December 29, 2000
Publication date:
July 26, 2001
Applicant:
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE & INDUSTRY
Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.
Type:
Application
Filed:
December 29, 2000
Publication date:
July 19, 2001
Applicant:
Agency of Industrial Science & Technology, Ministry of International Trade & Industry
Abstract: A sintered lithium titaniumphosphate is produced by subjecting the powder of a mixture consisting of a Li source, a Ti source, and a P source to spark plasma sintering under an increased pressure.
Type:
Grant
Filed:
September 30, 1999
Date of Patent:
July 3, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A chitooligosaccharide residue is disclosed which is represented by the formula:
wherein m=1-20, n=1-20, m+n=2-21, and m/n=5-0.05, and R represents a saturated or unsaturated aliphatic acyl group of 3-24 carbon atoms.
Type:
Grant
Filed:
October 29, 1999
Date of Patent:
March 6, 2001
Assignee:
Agency of Industrial Science and Technology Ministry of
International Trade and Industry
Abstract: A method for the formation of a zeolite membrane, which comprises preparing raw materials (a) and (b) for the synthesis of zeolite, at least one of the raw materials containing water, positioning the raw material (a) for the synthesis of zeolite so as to contact one lateral face of a porous body and the raw material (b) therefor so as to contact the other lateral face of the porous body, causing the two raw materials (a) and (b) to permeate the porous body thereby forming an interface of the two raw material in pores of the porous body, and inducing a reaction of hydrothermal synthesis at the interface, a porous body obtained by the method and having a zeolite membrane formed in the pores thereof, and a membrane used for separation and purification of gas and formed of the porous body.
Type:
Grant
Filed:
June 10, 1999
Date of Patent:
February 27, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Inventors:
Tetsuo Yazawa, Tetsuro Jin, Koji Kuraoka
Abstract: A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi2Sr2CanCun+1O6+2n oxide thin film 304, where n is an integer equal to 1 or greater, includes a first step of growing a Bi2Sr2CuO6 oxide thin film 302 to an arbitrary number of molecular layers by setting a growth environment to conditions in which oxides of bismuth alone are not formed, but intended multi-element oxide is formed, and supplying the growth environment with an excess of bismuth compared with other elements, thereby preventing deficiency of bismuth and also evaporating excess bismuth from the thin film, a second step of causing a layer 303 containing calcium atoms and copper atoms each in the amount of n/2 of the number of strontium atoms contained in the Bi2Sr2CuO6 oxide thin film to accumulate upon the Bi2Sr2CuO6 oxide thin film, and a third step of, in a state in which environmental temperature is set higher than the environmental temperature in the first step, caus
Type:
Grant
Filed:
March 8, 1999
Date of Patent:
February 6, 2001
Assignee:
Agency Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A laser ablation type ion source including vacuum chambers provided with a retaining section for holding a solid raw material for the generation of ions, an ion extracting electrode, an ion accelerating electrode, and a mass spectrograph for ion separation. The ion source also includes a laser beam source for injecting a laser beam of high density into the vacuum chamber.
Type:
Grant
Filed:
September 24, 1998
Date of Patent:
January 2, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A catalyst for producing acrolein by oxidizing ethane contains silicon, iron, an alkali metal, and oxygen. A method for producing acrolein includes the step of oxidizing ethane in the presence of the catalyst and a method for producing the catalyst includes the steps of mixing porous silicon oxide with an iron compound and an alkali metal compound and calcining the resultant mixture.
Type:
Grant
Filed:
December 2, 1998
Date of Patent:
January 2, 2001
Assignee:
Agency of Industrial Science & Technology, Ministry of
International Trade & Industry
Abstract: A manganese oxide material has MnO.sub.3 as a matrix. It is an antiferromagnetic insulator and, when subjected to an electrical current or electric field, it is transformed into a ferromagnetic metal.
Type:
Grant
Filed:
June 18, 1999
Date of Patent:
December 26, 2000
Assignees:
Agency of Industrial Science and Technology Ministry of International Trade & Industry, Angstrom Technology Partnership, Sanyo Electric Co., Ltd.
Abstract: A magnetoresistor with an ordered double perovskite structure is an oxide crystal which has an ordered double perovskite crystal structure represented by the general formula of A.sub.2 BB'O.sub.6, wherein A stands for Sr atoms, B for Fe atoms and B' for Mo or Re atoms and wherein the Fe atoms and the Mo or Re atoms are alternately arranged and which exhibits negative magnetoresistive characteristics.
Type:
Grant
Filed:
March 26, 1999
Date of Patent:
October 24, 2000
Assignees:
Agency of Industrial Science and Technology, Ministry of International Trade and Industry, Mitsubishi Electric Corporation, Angstrom Technology Partnership
Abstract: A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser light.
Type:
Grant
Filed:
March 16, 1998
Date of Patent:
October 24, 2000
Assignees:
Agency of Industrial Science and Technology Ministry of International Trade and Industry, Angstrom Technology Partnership
Abstract: A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exhibiting magneto-optical effect at ordinary room temperature.
Type:
Grant
Filed:
January 15, 1998
Date of Patent:
October 17, 2000
Assignees:
Agency of Industrial Science & Technology, Ministry of International Trade & Industry, Tokin Corporation
Abstract: A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.
Type:
Grant
Filed:
October 21, 1998
Date of Patent:
October 17, 2000
Assignee:
Agency of Industrial Science & Technology, Ministry of International Trade and Industry
Inventors:
Daisuke Takeuchi, Hideyo Okushi, Koji Kajimura, Hideyuki Watanabe
Abstract: A high sodium ion conducting inorganic composite solid electrolyte obtained by mixing Na.sub.4 Zr.sub.2 Si.sub.3 O.sub.12 with titanium oxide and sintering the resultant mixture and a method for the production of a high sodium ion conducting inorganic composite solid electrolyte, consisting essentially of the steps of mixing Na.sub.4 Zr.sub.2 Si.sub.3 O.sub.12 with titanium oxide and sintering the resultant mixture.
Type:
Grant
Filed:
February 4, 1998
Date of Patent:
September 12, 2000
Assignee:
Agency of Industrial Science & Technology and Ministry of International Trade & Industry
Abstract: A heat exchanger which uses a drag reduction fluid as one of its two heat transfer media has a heat transfer plate formed with irregularities.
Type:
Grant
Filed:
October 17, 1995
Date of Patent:
September 5, 2000
Assignee:
Agency of Industrial Scienceand Technology Ministry of International Trade & Industry