Abstract: A semiconductor device comprises a first semiconductor region having formed thereon a second semiconductor region which forms at its one surface an energy barrier with respect to minority carriers of the first semiconductor region, a conductive region in contact with the other surface of the second semiconductor region, and an induced layer formed in the operating state in a surface portion of the first semiconductor region in contact with the second semiconductor region under the conductive region, the carriers being transported across the induced layer to the first semiconductor region, whereby the conductive region acts as an emitter, the induced layer acts as a base and the first semiconductor layer acts as a collector of a transistor.