Abstract: The present invention relates to a 3-dimensional complex multilayer structure. The 3-dimensional complex multilayer structure includes a first pattern and a second pattern having different thicknesses formed on one or both surfaces of a plate. The first pattern is selected from the group consisting of parallel lines, parallel curves, parallel zigzag lines, and combinations thereof which do not meet each other. The second pattern is not parallel to the first pattern and is selected from the group consisting of parallel lines, parallel curves, parallel zigzag lines, and combinations thereof which do not meet each other. The interfaces between the first pattern and the second pattern form figures selected from the group consisting of polygons, circles, ellipses, and combinations thereof. The figures are repetitively formed on one or both surfaces of the plate. The 3-dimensional complex multilayer structure includes different complex patterns, whereas a conventional device has a kind of simple pattern.

Abstract: The present invention relates to a 3-dimensional complex multilayer structure. The 3-dimensional complex multilayer structure includes a first pattern and a second pattern having different thicknesses formed on one or both surfaces of a plate. The first pattern is selected from the group consisting of parallel lines, parallel curves, parallel zigzag lines, and combinations thereof which do not meet each other. The second pattern is not parallel to the first pattern and is selected from the group consisting of parallel lines, parallel curves, parallel zigzag lines, and combinations thereof which do not meet each other. The interfaces between the first pattern and the second pattern form figures selected from the group consisting of polygons, circles, ellipses, and combinations thereof. The figures are repetitively formed on one or both surfaces of the plate. The 3-dimensional complex multilayer structure includes different complex patterns, whereas a conventional device has a kind of simple pattern.

Abstract: A resin composition for a mold used in forming micropatterns comprises (A) 40 to 90 parts by weight of an active energy curable urethane-based oligomer having a reactive group; (B) 10 to 60 parts by weight of a monomer reactive with the urethane-based oligomer, (C) 0.01 to 200 parts by weight of a silicone or fluorine containing compound, based on 100 parts of the sum of the components (A) and (B); and (D) 0.1 to 10 parts by weight of a photoinitiator, based on 100 parts of the sum of the components (A), (B) and (C). The inventive resin composition can be easily cured by the action of an active energy ray, and the organic mold fabricated therefrom is easily lifted off from a master without irreversible adhesion or generation of defects and have excellent dimensional and chemical stabilities.

Abstract: A mold for use in forming a target patterning on a substrate by using a pattern formed at one side of the mold is made of amorphous fluorine resin. The mold is fabricated through a compression molding technique by using a master mold (104) with a pattern structure thereon facing the pattern.

Abstract: In a method for forming a micro-pattern on a substrate (200), polymer material having a solvent is coated on the substrate, thereby forming a polymer film on the substrate. Then, a mold (204) having a predetermined shape is compressed into the polymer film (202) on the substrate by employing a predetermined compression technique to entail a plastic deformation of the polymer film, thereby patterning the polymer film. This compression procedure is performed at a room temperature, e.g., of about 10 to about 30° C. In the present invention, before the mold (204) is pressed into the polymer film (202), a free volume in the polymer film is previously increased so that a pressure applied on the polymer material needed to plastically deform the polymer film is reduced. Thereafter, etching is performed on the substrate through the use of the patterned polymer film as an etching mask, thereby forming a micro-pattern on the substrate.

Abstract: A mask pattern is formed on a substrate by using a solvent absorbent mold having a pattern structure with a relief and an intaglio portion. A mask layer dissolved in a solvent to obtain fluidity is prepared on the substrate. The mold is pressed onto the mask layer with a predetermined pressure, and a portion of the mask layer that contacts with the relief portion of the mold is introduced into the intaglio portion thereof. Then, the mold absorbs the solvent contained in the mask layer to thereby solidify the mask layer. Next, the mold is separated from the substrate and the portion of the mask layer that contacts with the relief portion of the mold is removed, thus finally obtaining the desired minute mask pattern.