Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2?=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2?=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

Abstract: Provided are: a GaN substrate wafer having a crystallinity suitable as a substrate for a semiconductor device as well as an improved productivity; and a method of producing the same. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In this GaN substrate wafer, the second region has a minimum thickness of not less than 20 ?m, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and (c) the H concentration is 1×1017 atoms/cm3 or lower.

Abstract: A method for producing an optical element, wherein a hologram recording medium having a recording layer containing a polymerizable compound and a photopolymerization initiator is subjected to multiple recording exposure of a hologram under conditions where average exposure intensity based on the following formula (1) is 6 mW/cm2 or more. Average ? exposure ? intensity = ? i = 1 m ? ( ET i × EPW i ) ? i = 1 m ? ( ET i + EIT i - 1 ) ( 1 ) (In the formula (1), ETi is a single exposure time, which indicates exposure time (seconds) per multiple recording exposure. EPWi is exposure light intensity, which indicates total light intensity (mW/cm2) of reference light and object light. EITi-1 is exposure interval time, which indicates time (seconds) between one recording exposure and another recording exposure in the multiple recording exposure. m is a natural number indicating a total number of multiplexes.

Abstract: An object of the present invention is to provide an organic electroluminescent element material which can provide an organic electroluminescent element having high luminescent efficiency and a long operating lifetime.

Abstract: An object of the present invention is to provide a structural body that has high vibration damping and high sound-insulating performance which exceeds mass law while being relatively light weight, that is highly flexible in design, excellent in versatility, and easy to manufacture so that productivity and economic efficiency can be improved. The object thereof is achieved with a sheet member of a sheet having a thickness of 1 mm or less and having rubber elasticity and a resonant portion, wherein the resonant portion is provided in contact with a surface of the sheet, the resonant portion including a base part and a weight part, and the weight part being supported by the base part and having a larger mass than the base part.

Abstract: Disclosed is a support material for a fused deposition modeling. The support material has excellent adhesion to a variety of model materials and is easily dissolved and removed by washing with water. Also, the waste liquid (PVA-based aqueous solution) generated after the washing operation may be allowed to be drained as it is, in compliance with environmental regulations. The support material comprises (A) PVA-based resin having a group containing sulfonic acid or a salt thereof and (B) biodegradable polyester. The (A) PVA-based resin having a group containing sulfonic acid or a salt thereof and (B) biodegradable polyester have a sea-island structure in which one is dispersed in the other as a matrix.

Abstract: As a method for producing a 3-hydroxyisobutyric acid ester using a biocatalyst, a method for producing a 3-hydroxyisobutyric acid ester, including a step of allowing an alcohol or phenol to act on 3-hydroxyisobutyryl-CoA in the presence of alcohol acyltransferase to produce a 3-hydroxyisobutyric acid ester is provided.

Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and having a minimum reflectance of 20% or more in a specific wavelength region, in which the specific wavelength region is from the emission peak wavelength of the phosphor to 800 nm, and a light-emitting device comprising the phosphor.

Abstract: To provide a resin composition containing a polybutylene terephthalate resin having an intrinsic viscosity of 0.80 dL/g or less, a thermoplastic resin (X) having a lower SP value than the polybutylene terephthalate resin, where the SP value is a solubility parameter, and a carbon fiber, a content of carbon fiber is 5 to 30 mass % in the resin composition, and wherein a mass ratio between the polybutylene terephthalate resin (PBT) having an intrinsic viscosity of 0.80 dL/g or less and the thermoplastic resin (X), i.e. X/PBT, is more than 0.1 and less than 1.0.

Abstract: A compound represented by the following formula (1): [In the formula, A represents a polymerizable group. n represents an integer of 1 to 3. L represents an optionally branched (n+1)-valent linking group. Z represents an oxygen atom, or a nitrogen atom optionally having a substituent. m represents an integer of 0 or 1. X represents a single bond, an oxygen atom, a sulfur atom, a carbon atom optionally having a substituent, or a nitrogen atom optionally having a substituent. p represents an integer of 0 to 2. When p is 2, the two Xs may be the same or different. Y1 and Y2 are each independently a benzene ring, a naphthalene ring, or a phenanthrene ring. When Y1 or Y2 is a benzene ring, a or b corresponding to Y1 or Y2 is an integer of 0 to 4. When Y1 or Y2 is a naphthalene ring, a or b corresponding to Y1 or Y2 is an integer of 0 to 6. When Y1 or Y2 is a phenanthrene ring, a or b corresponding to Y1 or Y2 is an integer from 0 to 8.

Abstract: A GaN crystal with an angle between the normal line of a main surface and an m-axis of 0 degrees or more and 20 degrees or less is provided, in which the GaN crystal having, on the main surface thereof, a band-shaped dislocation-concentrated region that satisfies at least one requirement selected from the group consisting of (1) to (3) and a GaN wafer with a narrow width of the band-shaped dislocation-concentrated region present on the main surface and contribution to an improvement in the yield of a nitride semiconductor device: (1) a maximum effective width is less than 50 ?m; (2) at least one of a requirement (A) or a requirement (B) is satisfied, where (A) a dislocation density (DY) for a width of 15 ?m from the center is less than 3×107 cm?2, and (B) a dislocation density (DZ) for a width of 50 ?m from the center is less than 2.5×107 cm?2; and (3) a ratio (DZ/DX) of DZ to DX (a dislocation density DX for a width of 5 ?m from the center) is 0.5 or less, and/or DZ/DY is 0.5 or less.

Abstract: Silica particles have an average pore volume of atomic-scale pores of 0.35 nm3 or more as measured by positron annihilation spectroscopy. The silica particles may have an average pore volume of nanoscale pores of 5.4 nm3 or less as measured by positron annihilation spectroscopy. In the silica particles, a volume of pores having a diameter of 2 nm or less may be 0.0070 cm3/g or less as measured by a nitrogen gas adsorption method.

Abstract: A holographic recording medium composition comprising components (a) to (d) below, wherein an amount of allophanate bond units contained in the component (a) relative to a total weight of the components (a) and (b) is 6.5×10?4 mol/g or more: component (a): an isocyanate group-containing compound; component (b): an isocyanate-reactive functional group-containing compound; component (c): a polymerizable monomer; and component (d): a photopolymerization initiator.

Abstract: A porous film according to one aspect is a porous film including a polyolefin-based resin (A) and a styrene-based thermoplastic elastomer (B). The porous film may have a thickness (T) of 50 ?m or less, an average tensile breaking strength of 15 MPa or more, an average tensile breaking elongation of 35% or more, and a ratio (S/T) of air resistance (S) (sec/100 cc) to thickness (T) (?m) of 0.15 or more and 1.45 or less.

Abstract: A composition comprising: a carbazole compound having a crosslinking group and represented by formula (71) or (72) below; and an electron accepting compound having a crosslinking group and represented by formula (81) below.

Abstract: An agglomerated boron nitride powder, including a tap density of 0.6 g/ml or more and less than 0.8 g/ml and an interparticle void volume of 0.5 ml/g or more. A heat dissipation sheet, including the agglomerated boron nitride powder. An agglomerated boron nitride powder that enables a heat dissipation sheet to have improved thermal conductivity and good withstand voltage characteristics, a heat dissipation sheet containing the agglomerated boron nitride powder, and a semiconductor device including the heat dissipation sheet are provided.

Abstract: A sheet molding compound which is a thickened material of an epoxy resin composition, including a component (A), a component (B), and a component (C), in which the component (A) is an epoxy resin staying at a liquid state at 25° C., the component (B) is an acid anhydride, the component (C) is an epoxy resin curing agent, and in the thickened material, at least some of epoxy groups of the component (A) and at least some of carboxy groups derived from the component (B) form ester.

Abstract: Provided is a quaternary ammonium salt having a specific structure, an organic structure-directing agent containing the quaternary ammonium salt, and a method for producing the quaternary ammonium salt. Also, provided is a CON-type zeolite, which is a mixed crystal in which a molar ratio (Si/Al) of silicon (Si) and aluminum (Al) is 200 or more and 2000 or less, and which contains 25 mass % or more of Polymorph A, a catalyst containing a CON-type zeolite, and a method for producing a lower olefin using the catalyst.

Abstract: As a molded article that has gas barrier properties even if a gas barrier layer is not provided and that also has molding stability and biodegradability, there is proposed a molded article containing an aliphatic polyester-based resin (A) and a polyvinyl alcohol-based resin (B) as main component resins, wherein the molded article has a resin phase-separated structure having a continuous phase including the aliphatic polyester-based resin (A) as a main component, and a ribbon-like dispersed phase including the polyvinyl alcohol-based resin (B) as a main component.

Abstract: A sizing agent is provided, the sizing agent includes a component (A) and a component (B), wherein a mass ratio A/B of the component (A) to the component (B) is 0.5 to 20, and a proportion of a total mass of the component (A) and the component (B) with respect to a total mass of the sizing agent is 80% by mass or more, wherein the component (A) is an epoxy resin having a viscosity of 1 to 180,000 Pa·s at 30° C., and the component (B) is an aliphatic ester compound having a freezing point of 50° C. or lower.