Abstract: An uppermost interlayer isolation film is provided on a semiconductor substrate. An uppermost wire is provided on the uppermost interlayer isolation film. A silicon oxide film is provided to cover the upper surface and the side wall of the uppermost wire. A nitride film is provided on the uppermost interlayer isolation film to cover the uppermost wire through the silicon oxide film. A polyimide film is provided on the nitride film. A portion of the uppermost interlayer isolation film other than a portion located under the uppermost wire is downwardly scooped. The nitride film covers the scooped portion of the uppermost interlayer isolation film. According to the present invention, a semiconductor device improved to be capable of improving coverage of a silicon nitride passivation film is obtained.

Abstract: The substrate carrier management system includes a pre-diffusion processing apparatus, a carrier cleaner, and a carrier conveyer. The pre-diffusion processing apparatus unloads a substrate from a supplied carrier in which the substrate is stored, performs predetermined processing on the substrate, and transfers the processed substrate stored in a carrier to be used after processing. The carrier cleaner cleans a carrier emptied as a result of taking a substrate out of the carrier. The carrier conveyer conveys a carrier between the pre-diffusion processing apparatus and the carrier cleaner. The empty carrier unloaded from the pre-diffusion processing apparatus is cleaned by the carrier cleaner, and the processed substrate is stored in the empty carrier. With this arrangement, it is possible to automatically change carriers and thereby continuously use a cleaned carrier in the subsequent step without using a dedicated carrier.

Abstract: A substrate testing apparatus includes a first rail group made of a plurality of rails disposed in parallel with each other, a second rail group made of a plurality of rails disposed in parallel with each other in a direction that crosses the first rail group, a plurality of probe units disposed to cover respective intersections of the rails included in the first rail group and the rails included in the second rail group and being movable along the rails included in the first rail group and the second rail group, and corresponding interval maintaining means for keeping each rail included in the first rail group at an interval corresponding to an arrangement of locations to be measured on a substrate subjected to measurement, wherein the plurality of probe units each include a probing needle to be brought into contact with a surface of the substrate.

Abstract: There are provided a test apparatus and a test method for testing a semiconductor integrated circuit which facilitate control of a BOST device and improve the versatility of the BOST device. There is provided an interface for exchanging signals between a BOST device and an external controller. A test control signal and a test result analysis signal are exchanged by means of the interface, thus effecting a test and analysis of the test.

Abstract: An external test ancillary device (BOST device) analyzes measured information output from a semiconductor integrated circuit and transmits a result of analysis to a semiconductor test apparatus. The external test ancillary device includes a DAC counter for generating input data; a digital-to-analog converter for converting the data output from the counter from a digital signal into an analog signal; an analog-to-digital converter which receives data output from the digital-to-analog converter by way of a loopback line and converts the data from an analog signal into a digital signal; a DSP analysis section for performing self-diagnostic operation on the basis of data output from the analog-to-digital converter; measured data memory, an address counter, and a data write control circuit.

Abstract: A semiconductor test apparatus includes an analog-to-digital converter for converting into a digital signal an analog output from a circuit under test; a test-apparatus-ADC-control-signal generation circuit for generating a control signal for the analog-to-digital converter in accordance with an activation signal entered from the outside; a measured data memory for storing, as measured data for each conversion, a signal output from the analog-to-digital converter; an address counter for generating an address signal for the measured data memory; a DAC counter for generating data to be input to the circuit under test; and a data write control circuit which produces, in response to a flag signal output from the analog-to-digital converter and representing that conversion is being performed, an update signal for the address counter, a memory write signal for the measured data memory, and an update signal for the DAC counter.

Abstract: A semiconductor device having a structure in which no short circuit occurs between plug interconnections even when a void occurs in an insulating layer in a gap between wiring layers and a method of manufacturing the same are attained. The method includes: a step of forming transfer gates so as to be close to each other with a gap on a semiconductor substrate; a step of burying the gap and covering a wiring layer; a step of opening a contact hole in an insulating layer in the gap portion; a step of depositing a short-circuit preventing insulating film in the contact hole; an etch back step of removing the short-circuit preventing insulating film at least on the bottom of the gap to expose the semiconductor substrate; and a step of forming a plug interconnection.

Abstract: A trench is formed by performing an anisotropic etching treatment on a silicon substrate with the use of a mask pattern including a pad oxide film, a polysilicon film, and a silicon nitride film formed on the silicon substrate, as a mask. Next, the side surface of the polysilicon film is retreated by etching so that the part of an oxide film formed on the side surface of the polysilicon film may not be hung over the part of an oxide film formed on the side surface of the pad oxide film. Next, an oxide film is formed by performing a thermal oxidation treatment on the inner wall surface of the trench including the exposed side surface of the polysilicon film. This produces a semiconductor device that prevents voids from being formed in a trench isolation structure.

Abstract: A semiconductor device testing method is disclosed which comprises a first process 39, a second process 41 and a third process 43. In the first process 39, a test function part of a semiconductor device having a built-in self-test function is subjected to a self-diagnostic test, and a main circuit part of the device in question is tested by its test function part. If the result of either of the two tests on the device turns out to be abnormal, the device in question is rejected as defective. The test results are saved. In the second process 41, the main circuit part of each semiconductor device rejected as defective in the first process 39 is tested by use of an external test signal. If the result of the test on the semiconductor device judged faulty in the first process 39 turns out to be normal in the second process 41, then the device in question is judged normal in the third process 43.