Abstract: A focus monitoring method of the invention is characterized by transferring the pattern of a photo mask for phase shift focus monitor onto a photoresist on a semiconductor substrate by using modified illumination. Photo mask for phase shift focus monitor has first and second light transmitting portions which are adjacent to each other while sandwiching a shielding pattern, and is constructed so that a phase difference other than 180 degrees occurs between exposure light passed through the first light transmitting portion and exposure light passed through the second light transmitting portion. Consequently, a focus monitoring method, a focus monitor system, and a semiconductor fabricating method with high detection sensitivity in the z direction and which do not require changing of an illumination aperture can be achieved.

Abstract: In a process of cleaning a semiconductor substrate on which a polysilicon film serving as a silicon-based member and a tungsten film serving as a tungsten-based member are exposed simultaneously, there is used a cleaning fluid containing a hydroxide, a water-soluble organic solvent, a compound expressed by the following chemical formula (I) or (II) which is to serve as a silicon corrosion inhibitor, an organic compound, and at least one organic compound which is to serve as a tungsten corrosion inhibitor.

Abstract: Disclosed is a radio wave marker reception antenna which is not easily affected by disturbance noises, such as a broadcast wave, which are set to the same frequency band as the radio wave signal conveying driving assisting information. The radio wave marker reception antenna is equipped with a cover which is formed of a conductive material and which has a prism-like, cylindrical, conical, dome-shaped, or forwardly broadening configuration. The cover may be installed such that it is inclined from the position where its lower side is oriented vertically downward to a position where its lower side is directed obliquely forward. Further, the interior of the cover may be filled with a non-conductive material.

Abstract: An optical semiconductor module includes a substrate including a first plate member having strip lines for high-frequency signal transmission, located on a surface of the substrate and a second plate member including a feeding line on a surface, the first plate member having a loss angle at high frequencies smaller than that of the second plate member, and the second plate member including a material with a higher heat conductivity than that of the first plate member. The optical semiconductor module includes an integrated semiconductor laser and modulator including a modulator region having surface electrodes on a surface, and a laser region having a surface electrode on a surface, with an optical axis extending along the optical axis of the modulator region. The integrated semiconductor laser and modulator are located on the substrate such that the surface electrodes of the modulator region are bonded to the strip lines and the surface electrode of the laser region is bonded to the feeding line.

Abstract: A processing device executes an instruction speculatively, and execution result of the instruction becomes valid when all the predictions about true/false of branch condition are correct, and the instruction has a commit condition indicating the number of branch conditions.

Abstract: The rotary cathode X-ray tube equipment of the present invention is constructed so as to permit radiation of X-ray from all directions with respect to the whole circumference of a subject, and is used for x-ray CT. The equipment of the invention is constructed to prevent an X-ray radiation window 40 of a low strength from being influenced by atmospheric deformations of a vacuum vessel 1 or by machining and assembling errors, for example by using a joint portion disposed between the X-ray radiation window and an inner ring and having both a surface perpendicular to a rotational axis of a rotary member and a cylindrical surface parallel to the rotational axis, a face seal formed on the surface of the joint portion perpendicular to the rotational axis, and an axial seal formed on the cylindrical surface of the joint portion parallel to the rotational axis.

Abstract: A semiconductor laser device includes semiconductor layers including an active layer and cladding layers sandwiching the active layer and current injecting structure for regulating a region in the active layer into which current is injected. A light confinement coefficient in the current injection region perpendicular to the active layer is smaller than a light confinement coefficient in the same direction of a saturable absorption region. The function of the saturable absorption region is enhanced and pulsation oscillation can be produced at a high power light output.

Abstract: An engine starter is equipped with a motor having a cylindrical armature rotating shaft (3), a clutch mechanism (15) which transmits the rotational force of the motor, an output rotating shaft (17) which is disposed so as to mesh with the clutch mechanism (15) and be movable in the axial direction, and a solenoid switch (25) which has a moving member (32) which pushes the output rotating shaft (17) in the axial direction by electromagnetic force, the switch also causing a movable contact to contact a stationary contact and supply current to the motor. The output rotating shaft and the front portion of the moving body (32) of the solenoid switch (25) are both inserted into the cylindrical bore of the armature rotating shaft (3) from opposite ends, a sleeve bearing (23) is fit into the cylindrical bore and journals the output rotating shaft (17), whereby a cylindrical engine starter is obtained having a short overall length.

Abstract: A color cathode-ray tube having a face glass (1) coated with a plurality of phosphors (6B, 6G, 6R) different in luminescent color, the face glass (1) containing a colorant imparting a selective characteristic for absorbing light in the wavelength regions between the luminescent wavelength regions of the phosphors, (6B, 6G, 6R) and a colorant suppressing the light transmittance in the visible region, wherein the light transmittances in the luminescent wavelength regions shorter than the highest-visibility wavelength region are at least about 5% lower than the light transmittance in the highest-visibility region, while the light transmittances in the luminescent wavelength regions longer than the highest-visibility wavelength region is higher than the light transmittance in the highest-visibility region.

Abstract: A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.

Abstract: A cathode ray tube apparatus comprises three cathodes arranged in line with each other in a first direction for emission of respective electron beams therefrom, a focusing electrode having first to third apertures defined therein for the passage of the respective electron beams therethrough, a quadrupole electrode structure including first to third quadrupole electrodes one for each electron beam, each of the quadrupole electrode being comprised of a pair of horizontal electrode pieces spaced a predetermined distance from each other in a second direction perpendicular to the first direction and positioned upwardly and downwardly, respectively, with respect to the associated electron beam, and a pair of vertical electrode pieces spaced a predetermined distance from each other in a direction aligned with the first direction and positioned leftwards and rightwards with respect to such associated electron beam, and a power source circuit for applying a predetermined voltage to the quadrupole electrode structure.

Abstract: An interface circuit, having a single-chip microprocessor with program instructions in internal memory, includes switching devices between A-D (Analog to Digital) ports of the microprocessor and ports of the interface circuit for selectively connecting and disconnecting the microprocessor and interface ports. The interface circuit includes a connector through which address latch units and external memory having program instructions can be connected to the single-chip microprocessor. The connector provides for switch over of operation of the microprocessor from internal memory to external memory, and for operation of the switching devices. The connector provides for connection of an I/O (Input/Output) unit to provide input and output to ports of the interface circuit.

Abstract: An overcurrent relay comprises an input transformer (7), a rectifying circuit (8), a level detecting circuit (9) for providing an operation signal (S.sub.1) when a direct current signal voltage (E) exceeds a predetermined value, a determining means (10 to 15) for determining a time period of at least the positive and negative components of an ac signal voltage (V.sub.1) for providing a determination signal (S.sub.6) when the determined time period exceeds a predetermined time period, and a blocking means (16 and 17) responsive to the determination signal (S.sub.6) for blocking the operation signal (S.sub.1) from being output. In the case where the alternating current input current (I) and the ac signal voltage (V.sub.1) involve an attenuated direct current component due to magnetic saturation of a current transformer and the like, the reset time period of the operation signal (S.sub.1) is prolonged, while that time period of the ac signal voltage (V.sub.