Abstract: Internal parameter control signal generating units generate internal parameter control signals for adjusting internal parameters of a semiconductor memory device. Each internal parameter control signal generating unit includes an anti-fuse element formed with a data holding capacitor of a memory cell. The anti-fuse element is blown with application of a high voltage according to a parameter adjustment signal to break down a dielectric film and then, act as a resistance element. The internal parameter control signal generating unit sets a signal level of a corresponding internal parameter control signal in a non-volatile manner according to the presence or absence of a blowing input to the anti-fuse element.