Abstract: A semiconductor element manufacturing method according to the invention is such that a focal spot form of a laser light is an ellipse, and irradiation with the laser light is concentrated on a projected division line of an interface between a semiconductor substrate and a fixing sheet, which is a vaporizing pressure confining sheet, and vaporizing pressure generated by the irradiation is confined between the semiconductor substrate and the fixing sheet, and caused to act as a bending force on the semiconductor substrate, and an initial crack is extended. Because of this, energy of the laser light can be reduced, heat damage to an element region of the semiconductor substrate and debris can be reduced, and a division face with good flatness can be stably obtained.

Abstract: A current transformer support device includes three plate-like conductors, each of which has a first connection portion at one end and a second connection portion at the other end, and which are aligned linearly side by side while being spaced apart from one another, and a current transformer case which integrally insulates and supports the three conductors between the one end and the other end. The current transformer support device is characterized in that the current transformer case has current transformer attachment portions provided at positions corresponding to at least two of the three conductors, to which ring-like current transformer coils formed so as to insert the conductors are attached, and that the current transformer case and the current transformer coils attached to the current transformer attachment portions are formed into one unit with a hardening insulating material.