Abstract: A joint body of the present disclosure includes a metal member and a resin member joined to the metal member, the metal member has a dendritic structure portion on a surface joined to the resin member, at least a part of the dendritic structure portion has a nanometer-order diameter, and the resin member permeates through the dendritic structure portion. Such a configuration can ensure an adequate contact area between the resin member and the nanometer-order dendritic structure portion formed on the metal member, so that it is possible to obtain a joint body in which the metal member and the resin member are firmly joined together.

Abstract: A signal processing device includes: a signal acquisition unit that acquires an input signal; a signal extraction unit that extracts a specific signal by multiplying the input signal by a window function; a frequency conversion unit that performs frequency conversion on the extracted signal; and a signal output unit that outputs the frequency-converted signal, in which the window function includes one or a plurality of cos function terms in which at least one of the sign of a coefficient to multiply a cos function or a degree of the cos function is set in such a manner that both frequency resolution and a reduction amount of sidelobes fall within allowable ranges.

Abstract: A program processing device includes an address mask table generation section, a countermeasure application section, and an execution section. The address mask table generation section generates an address mask table based on setting data. The countermeasure application section attaches a call wrapper to a program, identifies a transition process of performing context switch from the program, and replaces the transition process with a process of performing a jump by specifying a physical address where the call wrapper is to be deployed. The execution section looks up the address mask table in executing a countermeasure-applied program, allocates a memory and assigns a physical address. Instead of acquiring a jump address with no change in the transition process, the execution section makes a change so as to use a jump address obtained by unmasking the jump address acquired by looking up the address mask table, based on determined isolation setting.

Abstract: A semiconductor device includes: an emitter layer and a contact layer that are provided in a surface portion of a base layer; a carrier storage layer provided between the base layer and a drift layer; and a trench reaching a position deeper than the carrier storage layer and having a gate electrode buried therein. A depth of the contact layer is deeper than that of the emitter layer. An impurity concentration of the carrier storage layer is 1.4E16/cm3 or less at least in a portion adjacent to the trench.

Abstract: The laminate includes a divided layer which is a layer having three or more regions by being divided into three or more in planar view in a subject direction. A thermal expansion coefficient in the subject direction of a material that constitutes at least one region of the regions of the divided layer differs from a thermal expansion coefficient in the subject direction of a material that constitutes at least one region of other regions of the divided layer.

Abstract: A parameter search device includes an operation result collection unit to collect an operation result including parameters indicating an operation condition of a mechanical device, an evaluation value acquisition unit to acquire evaluation values of the parameters obtained using the operation result, and a parameter search unit to search for a target parameter from the parameters indicating the operation condition of the mechanical device. The parameter search unit predicts a relationship between parameters and evaluation values using a machine learning model, uses the number of search candidates whose evaluation value exceeds the search best as a search end index, and determines whether or not to continue parameter search on the basis of a comparison result between the search end index and a threshold.

Abstract: An optical exchange device including: a local parent optical transceiver to directly detect an input intensity-modulated optical signal and output a local reception analog electrical signal; a local parent analog-digital converting unit to sample the local reception analog electrical signal and output a local reception digital signal; an exchange unit to divide the local reception digital signal into a wide area transmission digital signal; a wide area transmission digital signal processing unit to perform digital signal processing on the wide area transmission digital signal and generate a transmission subcarrier signal for coherent optical communication; a wide area digital-analog converting unit to perform frequency multiplexing on the transmission subcarrier signals and convert the multiplexed transmission subcarrier signals into a wide area transmission analog electrical signal.

Abstract: A power conversion device includes: a power converter which includes a plurality of converter cells; and a control device.

Abstract: A connector includes: a first spring structure having a first end which is connected to a connection part; a second spring structure including a coiled winding which is wound in the same direction as the first spring structure, the second spring structure having a first end which is connected to a connection part; a conductor to electrically connect the first spring structure and the second spring structure; and a bypass capacitor having a first electrode terminal which is connected to the first spring structure and the conductor, and a second electrode terminal which is grounded, and each turn of the winding of the first spring structure and each turn of the winding of the second spring structure are insulated from each other and arranged alternately along the same direction.

Abstract: A first buffer layer and a second buffer layer of a first conductivity type have a higher impurity concentration than a drift layer of the first conductivity type. The first buffer layer is provided in the drift layer. The second buffer layer is provided between a second main surface and the first buffer layer. A separation distance is provided between a location where the first buffer layer has a peak impurity concentration and a location where the second buffer layer has a peak impurity concentration in a thickness direction. The location where the first buffer layer has the peak impurity concentration in the thickness direction has a distribution portion and a non-distribution portion in a plan layout. The non-distribution portion has an effective width smaller than the separation distance. The effective width is twice a farthest distance from the distribution portion in the non-distribution portion in the plan layout.

Abstract: An object is to provide a technique capable of suppressing a warpage of a heat radiation member caused by heat stress in a power module. A power module includes: a semiconductor element; a ceramic substrate including a mounting surface on which the semiconductor element is mounted; and a fin base bonded to a surface of the ceramic substrate on a side opposite to the mounting surface, wherein a bonding region in the ceramic substrate bonded to the fin base is a region corresponding to a portion on which the semiconductor element is mounted, and an area of the bonding region in the ceramic substrate bonded to the fin base is smaller than an area of the portion on which the semiconductor element is mounted.

Abstract: Provided are a semiconductor device having a high bonding strength over the entire bonding region between a sinterable metal bonding member and each of a semiconductor element and a substrate with reduced damage to the semiconductor element, and a method of manufacturing the semiconductor device. A semiconductor device includes a substrate with a first surface, and at least one semiconductor element bonded to the first surface by a sinterable metal bonding member. The first surface has at least one step portion formed outside the at least one semiconductor element in a plan view. The at least one step portion extends along at least part of an outline of the at least one semiconductor element, and is disposed inside an outer edge of the substrate in the plan view.

Abstract: A power conversion device includes a DC connection member, an AC connection member, a power module, a capacitor, a housing having a cooling surface, and a control board. The power module has a module body portion, a DC connection terminal connected to the DC connection member, and an AC connection terminal connected to an AC connection member. The AC connection member and the AC connection terminal are located on one side in a first direction of the module body portion, and the capacitor is located on another side in the first direction of the module body portion. The DC connection terminal is located on one side or another side in the second direction of the module body portion. The DC connection member has an opposed portion opposed to the cooling surface, and at least a part of the opposed portion is thermally connected to the cooling surface.

Abstract: An abnormality detection apparatus (100) detects an abnormality of a facility. A model generation unit (110) extracts a feature amount of control signal time series data (143) as training data, and generates a control signal model (144) that outputs an abnormality degree for each control signal from the time series data of the control signal based on the training data. A reliability calculation unit (120) calculates the reliability of the control signal in a specific time range by inputting to the control signal model (144), the time series data of the control signal in the specific time range of an abnormality detection result detected in a sensor signal, as verification data. An abnormality diagnosis unit (130) outputs information in which the reliability of the control signal in the specific time range is added to the abnormality detection result in the specific time range, as an abnormality diagnosis result (146).

Abstract: A gear defect detection device includes an acquisition unit that obtains a pulse signal from a sensor, where the pulse signal includes first signal sections and second signal sections alternating one after another, the first signal sections each represent a bottom portion of the gear, and the second signal sections each represent a top portion of the gear; and a calculation unit that determines, presence or absence of a defect of the gear on a basis of a ratio between the length of a first time period of a corresponding one of the first signal sections and the length of a second time period of a corresponding one of the second signal sections, and further determines the presence or absence of a defect of the gear using at least one of acceleration or jerk of an object that acts according to rotation of the gear.

Abstract: An information processing device includes an acquisition unit that acquires XYZ values being values corresponding to a recognition target region as an image region in an image obtained by photographing an object under first illumination and being values represented in an XYZ color model, a spectral distribution, spectral reflectance in a case of a perfect reflecting diffuser, and a determination table indicating a correspondence relationship between Lab values being values in an L*a*b* color space and a color, a calculation unit that calculates Lab values as values corresponding to the recognition target region in the L*a*b* color space by using the XYZ values, the spectral distribution and the spectral reflectance, and a determination unit that determines color of the recognition target region by using the calculated Lab values and the determination table.

Abstract: The present disclosure relates to a semiconductor device including: a first main terminal that is provided with a first potential; a second main terminal that is provided with a second potential lower than the first potential; a control terminal that is connected to an overcurrent detection circuit provided externally; at least one semiconductor element that includes a MOS transistor connected between the first main terminal and the second main terminal; and at least one diode that has a cathode electrically connected to the first main terminal and an anode electrically connected to the control terminal and protects the overcurrent detection circuit, wherein the at least one semiconductor element is mounted on a conductor plate, and the at least one semiconductor element and the at least one diode are sealed with an insulating resin.

Abstract: An upper header tube according to the present disclosure is connectable to heat transfer tubes arranged in parallel to each other, and is capable of constituting a heat exchanger together with the heat transfer tubes. The upper header tube includes a first member including a bottom plate and a pair of lateral plates standing at opposed edges of the bottom plate, a second member disposed apart from the bottom plate, held between the pair of lateral plates, and bonded to the first member by brazing, and tab members disposed at the edges of the pair of lateral plates of the first member. The tab members are bent relative to the lateral plate so as to face the second member. Each of the tab members is tapered toward the tip in plan view.

Abstract: A control switching unit inquires of a remote control center via a communication unit as to presence or absence of another vehicle traveling within a predetermined range including a host vehicle and being switchable from remote driving control to follow-up driving control when a communication quality detected by a communication quality detecting unit becomes less than a predetermined communication quality during the control of the driving of the host vehicle by a remote driving control unit. The control switching unit causes the remote driving control unit to continuously control the driving of the host vehicle when there is a response indicating presence of the another vehicle, and causes a follow-up driving control unit to control the driving of the host vehicle when there is a response indicating absence of another vehicle.

Abstract: A voltage generated in a DC line at the time when a sub module is deactivated in the event of a short-circuiting fault in the DC line is suppressed. A power conversion system includes a power converter including a leg circuit, a control device, and a voltage suppression circuit connected to a DC line. The leg circuit includes a plurality of sub modules connected in series, and at least one of them is a first sub module implemented by a sub module in a full-bridge configuration or a 1.5 half-bridge configuration. When the control device detects a short-circuiting fault in the DC line, it stops a switching operation of the plurality of sub modules. The voltage suppression circuit is configured to suppress a voltage generated in the DC line when the switching operation is stopped.