Abstract: A high electron mobility transistor includes a semiconductor structure having a channel layer and a cap layer forming a two dimensional electron gas (2-DEG) channel, and a source, a drain, and a gate electrodes. The gate is arranged on the cap layer between the source and the drains, such that the conductivity of the 2-DEG channel is modulated in response to applying voltage to the gate. The cap layer includes III-N material. The gate has a layered structure including a bottom metal layer arranged on cap layer, a ferroelectric oxide (FEO) layer arranged on bottom metal layer, and a top metal layer arranged on the FEO layer. Thickness of FEO layer is less than tcap/(2??cap), wherein ? is a parameter of material of FEO layer, tcap is thickness of cap layer, and ?cap is electric permittivity of cap layer.

Abstract: A method determines a feedrate of a tool machining a workpiece according to a path. The method partitions the path into a set of segments, such that within each segment a function of engagement of the tool and the workpiece is substantially constant. Next, the method determines a feedrate for each segment in the set.

Abstract: A method controls power generated by a photovoltaic array. The method estimates a voltage corresponding to a global maximum power point (MPP) of the power generated by the photovoltaic array to produce an estimated voltage; and tracks an output of the power based on the estimated voltage to determine the global MPP.