Abstract: There is provided a method for suppressing generation of cracks or damages on a compound semiconductor epitaxial wafer during an epitaxial growth due to growth of an epitaxial layer on the rear surface at the edge of the epitaxial layer which is located at the upstream side of the flow of the source gas. In manufacturing a semiconductor wafer by growing a single crystal semiconductor epitaxial layer having a zinc blend structure on a single crystal semiconductor substrate having a zinc blend structure, the surface of the single crystal semiconductor substrate has (100) surface orientation having an off angle and a source gas is supplied in the direction of the off angle or in a direction at 30.degree. or less to the direction at 180.degree. thereto.

Abstract: The present invention provides a glycoprotein derived from human cell membrane, which has a molecular weight of 20 to 25 Kd as estimated by SDS polyacrylamide gel electrophoresis, and contains N-glycoside type carbohydrate chain and phosphatidylinositol, and possesses an inhibitory activity to complement-mediated cell membrane damage. The present invention further provides a gene coding for the glycoprotein, and a method for the production of the glycoprotein and the gene therefor.

Abstract: A disc brake for a vehicle comprising a disc and pads, the disc being rotatable integrally with wheels and the pads capable of being brought into friction engagement with the disc. The disc comprises a baked carbon fiber reinforced carbon composite comprising dispersed bundles of short carbon fibers impregnated with a reinforcing material of primarily a pitch. The pads comprise a baked carbon fiber reinforced carbon composite comprising dispersed bundles of short carbon fibers impregnated with a reinforcing material of primarily a pyrolytic carbon and a thermosetting resin.

Abstract: A magnetron sputtering apparatus has a target disposed above an inner magnetic pole surrounded by an outer magnetic pole of opposite polarity and a gradient adjusting means mounted underneath the target and interposed between the inner and outer magnetic poles. The gradient adjusting means operates such that the gradient of the component of the leakage magnetic field vertical to the target is reduced over the middle portion of the target, between the inner and outer magnetic poles, and is increased at portions closer to the magnetic poles. The gradient adjusting means may be made of a soft magnetic material or a permanent magnet material, and the soft magnetic material may be used alone or in combination with the permanent magnet material. A second permanent magnet may be used in conjunction with the use of a permanent magnet as the gradient adjusting means.

Abstract: A substrate for a high-intensity LED and the method of epitaxially growing the substrate according to the invention are based on the fact that, in using an AuZn alloy or the like as the ohmic electrode of the p-type Al.sub.x Ga.sub.1-x As layer (2), the higher the carrier concentration of this layer, the smaller the contact resistance and the lower the applied voltage (V.sub.F) necessary for passing a forward current of 10 mA. Joint use is made of gas-phase epitaxy and liquid-phase epitaxy. A layer having a carrier concentration three to five times that of an epitaxial layer formed by liquid-phase epitaxy (LPE) can be realized with excellent reproducibility by gas-phase epitaxy (MOCVD process, MBE process, etc.). By utilizing this p-type Al.sub.x Ga.sub.1-x As layer (2) as an electrode contact layer, contact resistance can be reduced and variance diminished.

Abstract: A method for preparing silica gel particles, which comprises suspending a mixed solution of a silicic acid ester and water in an organic liquid immiscible with the mixed solution, followed by gelation wherein said organic liquid contains an ethyl cellulose having an ethoxy group content of at least 47% by weight and being soluble in the organic liquid.

Abstract: New electrically conductive material suitable particularly for a secondary battery and a process for preparing the electrically conductive material are provided. The process for the preparation of the electrically conductive material comprises the steps of reacting a compound having conjugated double bonds with an oxidizing agent wherein the oxidizing agent comprises a cupric compound and a nitrile compound. The electrically conductive material comprises grainy polypyrrole obtained by reacting a pyrrole compound with an oxidizing agent which is constituted by primary particles having an average particle size of 0.01 to 0.4 .mu.m and has a press molding density of 1 to 1.6 g/cm.sup.3.