Patents Assigned to Mitsubishi Kasei Polytec Co.
  • Method for forming an electrode for a compound semiconductor
    Patent number: 5284798
    Abstract: On the surface of n-type layer of Ga.sub.1-x Al.sub.x As (0.ltoreq..times..ltoreq.1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness:______________________________________ 1st layer Au 10-100 .ANG. 2nd layer Ge 50-200 .ANG. 3rd layer Ni 50-200 .ANG. 4th layer Au 200-1000 .ANG. ______________________________________Thus, it is possible to form an ohmic electrode, which has low contact resistance and does not develop ball-up phenomenon.
    Type: Grant
    Filed: October 26, 1992
    Date of Patent: February 8, 1994
    Assignees: Mitsubishi Kasei Polytec Co., Mitsubishi Kasei Corporation
    Inventors: Toshihiko Ibuka, Masahiro Noguchi
  • Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor
    Patent number: 5192994
    Abstract: On the surface of n-type layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness:______________________________________ 1st layer Au 10-100 .ANG. 2nd layer Ge 50-200 .ANG. 3rd layer Ni 50-200 .ANG. 4th layer Au 200-1000 .ANG. ______________________________________Thus, it is possible to form an ohmic electrode, which has low contact resistance and does not develop ball-up phenomenon.
    Type: Grant
    Filed: August 28, 1990
    Date of Patent: March 9, 1993
    Assignees: Mitsubishi Kasei Polytec Co., Mitsubishi Kasei Corporation
    Inventors: Toshihiko Ibuka, Masahiro Noguchi