Patents Assigned to Mitsubishi Material Corp.
  • Patent number: 7754359
    Abstract: A solid oxide fuel cell provided with a power cell (1) in which a fuel electrode layer (4) is arranged on one surface of a solid electrolyte layer (3) and an air electrode layer (2) is arranged on the other surface thereof, wherein the solid electrolyte layer (3) has a two layer structure including a first electrolyte layer (3a) made of a ceria based oxide material and a second electrolyte layer (3b) made of a lanthanum gallate based oxide material, and the second electrolyte layer is formed on the side of the air electrode layer. Preferably, the material composition for the fuel electrode layer (4) is a mixture of Ni and CeSmO2, wherein the composition ratio of component materials is graded along the thickness thereof in such a way that the quantity of Ni is made less than the quantity of CeSmO2 near the boundary interface with said solid electrolyte layer, and the mixing ratio of Ni is gradually increased with an increasing distance away from the interface.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: July 13, 2010
    Assignees: Mitsubishi Materials Corp., The Kansai Electric Power Co., Inc.
    Inventors: Koji Hoshino, Kei Hosoi, Takashi Yamada, Jun Akikusa
  • Publication number: 20090239454
    Abstract: A CMP conditioner having excellent corrosion resistance around abrasive grains includes a grindstone base having, formed on one side, an abrasive grain layer including abrasive grains fixed in a metallic bonding phase treated to form a first protective layer comprising an oxide on the surface of the metallic bonding phase of the abrasive grain layer by the sol-gel method. Subsequently, an aerosol obtained by dispersing fine particles of a brittle material in a gas is jetted and caused to strike on the surface of the first protective layer to form a second protective layer comprising a thick oxide film.
    Type: Application
    Filed: September 21, 2007
    Publication date: September 24, 2009
    Applicants: Mitsubishi Materials Corp., Toto Ltd.
    Inventors: Tetsuji Yamashita, Naoki Rikita, Takashi Kimura, Masaharu Ogyu, Hiroaki Ashizawa, Hironori Hatono, Masahiro Tokita
  • Patent number: 7465432
    Abstract: A process is provided for producing a fine tungsten carbide powder, which comprises the steps of drying a slurry, which is obtained by mixing an aqueous ammonium tungstate solution with a carbon powder, at low temperature, to form a precursor, mixing a reduction and carburization product, which is obtained by reducing and oxidizing the precursor in an inert gas, with a carbon powder in a proportion required to substantially carburize the entire tungsten component into tungsten carbide (WC), and carburizing the mixture; and a high-performance fine tungsten carbide powder produced by the process, which has an average particle size of 0.8 ?m or less and is free of a coarse power having a particle size of more than 1 ?m, and which also contains less metal impurities and contains oxygen and nitrogen in a predetermined amount.
    Type: Grant
    Filed: August 3, 2004
    Date of Patent: December 16, 2008
    Assignees: Mitsubishi Materials Corp., Japan New Metals Co., Ltd.
    Inventors: Hiroshi Yaginuma, Susumu Morita
  • Publication number: 20050145066
    Abstract: A cutting insert exhibiting excellent chipping resistance made of cubic boron nitride based ultra-high pressure sintered material.
    Type: Application
    Filed: February 28, 2003
    Publication date: July 7, 2005
    Applicant: MITSUBISHI MATERIALS CORP.
    Inventors: Itsurou Tajima, Naokata Seki, Kazuo Yamamoto
  • Publication number: 20030147798
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Application
    Filed: April 2, 2002
    Publication date: August 7, 2003
    Applicant: MITSUBISHI MATERIALS CORP.
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
  • Patent number: 5858087
    Abstract: The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11.
    Type: Grant
    Filed: December 26, 1996
    Date of Patent: January 12, 1999
    Assignees: Mitsubishi Materials Silicon Corp., Mitsubishi Materials Corp.
    Inventors: Hiroaki Taguchi, Takashi Atami, Hisashi Furuya, Michio Kida
  • Patent number: 5853877
    Abstract: This invention relates to a method for disentangling hollow carbon microfibers and to the dispersion of hollow carbon microfibers, preferably having an outer diameter of 3.5 to 70 nm and an aspect ratio of at least 5, to form transparent electrically conductive films. Hollow carbon microfibers, treated with strong acids such as sulfuric acid or oleum and an oxidizing agent such as nitric acid, are disentangled and dispersed homogeneously in a polar solvent. The slurry in which the microfibers are suspended can be coated on a substrate. The coating film is dried and a transparent electrically conductive film is formed. A carbon microfiber aggregation film with excellent transparency is obtained having a total transmittance of at least 80 percent and a haze value of at most 0.1%.
    Type: Grant
    Filed: May 31, 1996
    Date of Patent: December 29, 1998
    Assignees: Hyperion Catalysis International, Inc., Mitsubishi Materials Corp. Tokyo
    Inventor: Daisuke Shibuta
  • Patent number: 5807031
    Abstract: The invention is designed to improve a cutting performance and a spiral chip discharging ability. Main cutting edges 16 and auxiliary cutting edges 18 are formed along the respective sides of an upper surface 14 of a negative throw-away tip 12 and along side of bevelled corners, respectively. A rake face 22 of each main cutting edge 16 is gradually inclined toward a lower surface of the tip 12 by an angle of inclination .beta. along the extension of the main cutting edge 16 away from its adjacent auxiliary cutting edge 18 and by a rake angle .alpha. (>.beta.) along a direction perpendicular to the main cutting edge 16. The tip 12 is mounted on a cutter 9 as a rotatable cutting tool so as to discharge spiral chips during cutting. To this end, the tip 12 is mounted such that an axial rake angle, a corner angle, an angle of inclination, and a true rake angle are set in a range of -4.degree. to -10.degree., a range of 25.degree. to 60.degree., a range of 0.degree. or larger, and a range of -20.degree. to -5.
    Type: Grant
    Filed: March 7, 1996
    Date of Patent: September 15, 1998
    Assignee: Mitsubishi Materials Corp.
    Inventors: Tatsuo Arai, Takayoshi Saito, Yoshihiko Kimura
  • Patent number: 5657123
    Abstract: A light interference-type film thickness measuring mechanism 24 measures a film thickness by irradiating a light emitted from a light transmission portion on to the bottom surface of a wafer W held by a wafer holding head 8 and receives the reflected light and. A cleaning mechanism 26 includes a cleaning fluid tank 27 a top surface of which is opened and arranged in the vicinity of the bottom surface of the wafer; a light transmission portion 50 formed at the bottom portion 48 of the tank 27; a wafer cleaning nozzle 40 spraying the cleaning fluid on the measuring points at the bottom surface of the wafer; a light transmission portion cleaning nozzle 44 spraying the cleaning fluid on the light transmission portion 50 and cleaning fluid supply means for supplying cleaning fluid to these nozzles.
    Type: Grant
    Filed: September 14, 1995
    Date of Patent: August 12, 1997
    Assignee: Mitsubishi Materials Corp.
    Inventors: Katsumi Mogi, Osamu Endo
  • Patent number: 5589223
    Abstract: A cermet cutting tool, and process for producing the same, comprising a substrate formed from titanium carbo-nitride based cermet, and a hard coating layer of average thickness 0.5.about.20 .mu.m, formed onto the surface of the cermet substrate comprising a lower layer formed from at least one layer of a compound selected from the group consisting of titanium carbide (TiC), titanium nitride (TiN), titanium carbo-nitride (TiCN), titanium carbo-oxide (TiCO) and titanium carbo-oxi-nitride (TiCNO), and aluminum oxide (Al.sub.2 O.sub.3). Additionally, at least one of the layers comprising the hard coating layer is a titanium carbo-nitride layer, and at least one layer of this titanium carbo-nitride layer comprises a longitudinal growth crystal structure, and a further layer comprises a granular crystal structure. In the method of fabrication, chemical vapor deposition is performed using a reaction gas composed of 1.about.5% of TiCl.sub.4, 0.1.about.1% of CH.sub.3 CN, 0.about.25% of N.sub.
    Type: Grant
    Filed: March 21, 1995
    Date of Patent: December 31, 1996
    Assignee: Mitsubishi Material Corp.
    Inventors: Niro Odani, Hironori Yoshimura, Akira Osada, Tetsuya Tanaka, Seiichirou Nakamura
  • Patent number: 5478172
    Abstract: Ultrafine powder is stored in a pneumatic transportation tank (20), and is discharged to a transporting conduit (23) while being fluidized by the pressurized air fed through a fluidizing air port (24). The ultrafine powder is fed to a weigher (30) provided at the other end of the transporting conduit (23), at which the weight of the transported ultrafine powder is weighed by a load cell (31). After the weighed value reaches 90% of a predetermined value, the fed amount of the pneumatic transportation air is reduced, and a bypass regulating valve (38) is adjusted to thus decelerate the transportation. When the weighed value reaches 100% of the predetermined value, the discharge of the ultrafine powder to the transporting conduit (23) is stopped. This method and the apparatus enable the storage, quantitative batch transportation, and automatic weighing of the ultrafine powder such as silica fume.
    Type: Grant
    Filed: February 15, 1994
    Date of Patent: December 26, 1995
    Assignees: Keihin Ryoko Concrete Ind. Corp., Mitsubishi Materials Corp., Takenaka Corporation
    Inventors: Tetsuo Oura, Mitsuo Sato, Yasuyuki Saito, Ken-ichi Mase, Kenzo Kitazawa, Hayao Aoyagi, Toru Okuno, Toshio Yonezawa, Kenro Mitsui
  • Patent number: 5478864
    Abstract: A novel disinfectant is disclosed. Said disinfectant is a compound 1,n-bis(N.sup.5 -m-, or p-trifluoromethyl-phenyl-N.sup.1 -biguanido)-C.sub.3 -C.sub.10 -alkane. The m-trifluoro-C.sub.6 derivative is a known compound. The compounds of the present invention exhibit germicidal effect against Pseudomonas aeruginosa, Proteus vulgaris and Alcaligenes faecalis at concentrations of 1/4-1/8 of the effective concentration for chlorhexidine. Against other microorganisms, the compounds are effective at the same level as chlorhexidine.
    Type: Grant
    Filed: September 15, 1994
    Date of Patent: December 26, 1995
    Assignees: Mitsubishi Materials Corp., Yoshida Pharmaceutical Co., Ltd.
    Inventors: Akira Nishihara, Akihiro Nakamura, Tsunetoshi Honda, Michio Harada, Maki Takizawa
  • Patent number: 5476065
    Abstract: A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling chamber to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supp
    Type: Grant
    Filed: January 28, 1994
    Date of Patent: December 19, 1995
    Assignees: Mitsubishi Materials Silicon Corp., Mitsubishi Materials Corp.
    Inventors: Kazuhiro Ikezawa, Hiroshi Yasuda, Akira Tanikawa, Hiroyuki Kojima, Koji Hosoda, Yoshifumi Kobayashi
  • Patent number: 5443335
    Abstract: The invention relates to a cutting insert. The cutting insert has a polygonal tabular body having a main cutting edge and a sub-cutting edge. A rake surface connected to the main cutting edge and the sub-cutting edge is composed of a plurality of consecutive component surfaces so as to present a multi-face surface which is curved and convex along the circumference of the body. The consecutive component surfaces are demarcated from adjacent component surfaces by edges lines L.sub.1, L.sub.2 which at their one end reach the main cutting edge. The intersection angles at which the component surfaces intersect the end surface connected to the main cutting edge are so varied in a stepped manner that the intersection angle of the component surface most remote from the nose portion is the smallest. The third component surface is curved along the circumference of the body so as to be convex outward, so that the portion of the main cutting edge associated with this component surface is also curved to be convex outward.
    Type: Grant
    Filed: January 27, 1994
    Date of Patent: August 22, 1995
    Assignee: Mitsubishi Materials Corp.
    Inventors: Takamasa Shimano, Tatsuo Arai, Takayoshi Saito
  • Patent number: 5442509
    Abstract: A protection structure for a surge absorbing element for protecting equipment such as communications lines from surges caused by lightning or the like which makes use of a surge absorbing element in parallel with the equipment to be protected and a low melting point metal wire in direct contact with the element and in series therewith. The structure protects the surge absorbing element or assembly from continuous overvoltage or overcurrent which may be generated by a short-circuit of an alternating electric current source and the like.
    Type: Grant
    Filed: May 16, 1994
    Date of Patent: August 15, 1995
    Assignee: Mitsubishi Materials Corp.
    Inventors: Takaaki Ito, Hiroyuki Ikeda, Naoyuki Tomita, Takashi Shibayama, Tomio Iwata, Takashi Kurihara
  • Patent number: 5427479
    Abstract: A substantially conical tool body 1 has a groove 11 extending in the direction of generating line. The groove 11 slidably receives a slider 16 carrying a cutting insert 5A. A spacer 12 having serration grooves 12a is interposed between one wall surface 11a of the groove and the slider 16. Serration grooves 16a are formed in one side surface of the slider 16. A wedge member 13 is detachably interposed between the wall surface 11b of the groove 11 and the slider 16 so as to press the slider 16 to bring the serration grooves 12a16a into engagement with each other. Any wear and deformation due to cutting load appear on the spacer 12 and the wedge member 13, so that original mounting and positional precision of the slider 16 can easily be recovered by renewing these members, thus maintaining a required level of machining precision.
    Type: Grant
    Filed: April 22, 1994
    Date of Patent: June 27, 1995
    Assignee: Mitsubishi Materials Corp.
    Inventors: Yoshihisa Ueda, Syouji Takiguchi, Akira Kanaboshi, Takehiro Ohnishi
  • Patent number: 5422072
    Abstract: A Co-based alloy exhibits superior high-temperature strength and resistance properties. In one embodiment, the Co-based alloy contains, in weight percent, from about 0.1 to about 1.2 of C; from about 0.01 to about 2 of at least one of Si and Mn; from about 22 to about 37 of Cr; from about 5 to about 15 of Ni; from about 0.1 to about 3.5 of Re; with a balance being Co and incidental impurities. Co and C, Si, Mn, Cr, Ni, Re, B, Zr, W, Mo, Ta, and Nb impart high-temperature wear resistance to the alloy to withstand repeated temperature cycling in a glass spinnaret. In one embodiment of the present invention, Hf is added to improve molten glass corrosion resistance, while Y and other rare earth elements are added in alternate embodiments to improve high-temperature oxidation resistance. Percentages by weight are disclosed for enhanced high-temperature oxidation resistance, increased fluid wear resistance and enhanced molten glass corrosion resistance.
    Type: Grant
    Filed: December 20, 1993
    Date of Patent: June 6, 1995
    Assignee: Mitsubishi Materials Corp.
    Inventors: Akira Mitsuhashi, Kensho Sahira, Saburo Wakita
  • Patent number: 5377067
    Abstract: A junction box for the protection of electronic devices and communication lines from lightning surges, overcurrent and overvoltage. The box includes sockets for connection to the devices and liens along with a plurality of combinations of surge absorbing elements and low melting point metal wires for the protection feature.
    Type: Grant
    Filed: October 4, 1993
    Date of Patent: December 27, 1994
    Assignee: Mitsubishi Materials Corp.
    Inventors: Yoshiyuki Tanaka, Koichi Kurasawa, Keisuke Kumano
  • Patent number: 5372657
    Abstract: Disclosed herein is an amorphous material in the form of foil for the regenerator, which is prepared by quenching a melt of a rare earth alloy by injection toward the surface of a roll running at a high speed, said alloy being composed of one or more rare earth elements in an amount of 50-99 atomic %, with the remainder being one or more iron family elements. This amorphous material has a large, stable specific heat capacity at very low temperatures.
    Type: Grant
    Filed: September 11, 1992
    Date of Patent: December 13, 1994
    Assignees: Mitsubishi Materials Corp., Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yasuhiro Hanaue, Etsuji Kimura, Takuo Takeshita, Uichiro Mizutani, Yoshiki Hoshino
  • Patent number: 5339068
    Abstract: A chip-type ceramic element contains a terminal electrode at each end and an inorganic insulating layer on the surface of the ceramic element between the electrodes. The terminal electrodes include a baked electrode formed from a conductive paste reacted with the material of the inorganic insulating layer. Layers of nickel and tin are plated on the baked electrode for improved heat resistance and soldering adhesion, respectively. The insulating layer prevents unwanted portions of the terminal electrodes from coming into contact with the ceramic element, thereby preventing dispersion in the resistance values of the element.
    Type: Grant
    Filed: June 18, 1993
    Date of Patent: August 16, 1994
    Assignee: Mitsubishi Materials Corp.
    Inventors: Masakiyo Tsunoda, Hiroaki Nakajima, Masami Koshimura