Abstract: The amount of residual carbon and hydroxyl groups in a synthetic quartz powder made by a wet process is reduced by baking the synthetic quartz powder in a low pressure atmosphere. Quartz glass crucibles made using the synthetic quartz powder have low bubble contents, and are particularly suited for growing single crystals.

Abstract: The amount of residual carbon and hydroxyl groups in a synthetic quartz powder made by a wet process is reduced by baking the synthetic quartz powder in a low pressure atmosphere. Quartz glass crucibles made using the synthetic quartz powder have low bubble contents, and are particularly suited for growing single crystals.

Abstract: A composite crucible for pulling up monocrystalline silicon, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed. Methods for preparing and regenerating a composite crucible are also disclosed.

Abstract: A composite crucible for pulling up monocrystalline silicone, which is superior in shape stability and suitable for a large-sized one is provided. The composite crucible is characterized in that a carbonaceous material as an outer layer and a quartz glass as an inner layer are integrally formed.

Abstract: The amount of residual carbon and hydroxyl groups in a synthetic quartz powder made by a wet process is reduced by baking the synthetic quartz powder in a low pressure atmosphere. Quartz glass crucibles made using the synthetic quartz powder have low bubble contents, and are particularly suited for growing single crystals.

Abstract: The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.