Patents Assigned to Mitsubishi Materials Corporation (MMC)
  • Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
    Patent number: 8404205
    Abstract: The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: March 26, 2013
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation (MMC)
    Inventors: Laura Prine, Richard M. Halstead, Michael W. Keevan