Patents Assigned to MITSUBISHI MATERIALS TECHNO CORPORATION
  • Patent number: 9250014
    Abstract: The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10?4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: February 2, 2016
    Assignee: MITSUBISHI MATERIALS TECHNO CORPORATION
    Inventors: Yukichi Horioka, Jiro Kajiwara, Hirotsugu Sanada
  • Patent number: 9212850
    Abstract: The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10?4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: December 15, 2015
    Assignee: MITSUBISHI MATERIALS TECHNO CORPORATION
    Inventors: Yukichi Horioka, Jiro Kajiwara, Hirotsugu Sanada
  • Publication number: 20140223763
    Abstract: The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10?4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C to 200 C via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
    Type: Application
    Filed: August 25, 2011
    Publication date: August 14, 2014
    Applicant: MITSUBISHI MATERIALS TECHNO CORPORATION
    Inventors: Yukichi Horioka, Jiro Kajiwara, Hirotsugu Sanada
  • Publication number: 20110174214
    Abstract: To provide a crystal growing apparatus and a crystal growing method capable of enabling use of a quartz crucible for a longer period of time and improving operation rate. A crystal growing apparatus according to the invention includes a crystal growing furnace equipped with a quartz crucible, a raw material melting furnace, and a supply unit for repeatedly supplying a molten raw material from the raw material melting furnace to the quartz crucible. The crystal growing furnace may include a supply port for allowing supply of the molten raw material therethrough, and the supply port may be configured to be movable close to or away from the raw material melting furnace. A plurality of the crystal growing furnaces may be disposed around the raw material melting furnace. The raw material melting furnace may include an insoluble material separating unit. A crystal growing method according to the invention includes supplying a molten raw material melted in advance to a quartz crucible.
    Type: Application
    Filed: November 20, 2009
    Publication date: July 21, 2011
    Applicant: MITSUBISHI MATERIALS TECHNO CORPORATION
    Inventor: Yukichi Horioka