Patents Assigned to Mitsubishi Metal Corporation
  • Patent number: 5468724
    Abstract: Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.
    Type: Grant
    Filed: May 27, 1993
    Date of Patent: November 21, 1995
    Assignees: International Superconductivity Technology Center, Matsushita Electric Industrial Co., Ltd., Kyocera Corporation, Mitsubishi Metal Corporation, The Tokyo Electric Power Company, Incorporated, Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Takahiro Wada, Shin-ichi Koriyama, Takeshi Sakurai, Nobuo Suzuki, Takayuki Miyatake, Hisao Yamauchi, Naoki Koshizuka, Shoji Tanaka
  • Patent number: 5338371
    Abstract: There is disclosed a R--Fe--B or R--Fe--Co--B alloy permanent magnet powder which may contain Ga, Zr or Hf, or may further contain Al, Si or V. Each individual particle of the powder includes a structure of recrystallized grains containing a R.sub.2 Fe.sub.14 B or R.sub.2 (Fe,Co).sub.14 B intermetallic compound phase. The intermetallic compound phase has recrystallized grains of a tetragonal crystal structure having an average crystal grain size of 0.05 to 20 .mu.m. At least 50% by volume of the recrystallized grains of the aggregated structure are formed so that a ratio of the greatest dimension to the smallest dimension is less than 2 for each recrystallized grain. In order to manufacture the magnet powder, regenerative material and alloy material are prepared and their temperature is elevated in a hydrogen atmosphere. Then, the alloy material and the regenerative material are held in the same atmosphere at a temperature or 750.degree. C. to 950.degree. C., and then held in a vacuum at 750.degree. C.
    Type: Grant
    Filed: November 19, 1992
    Date of Patent: August 16, 1994
    Assignee: Mitsubishi Metal Corporation
    Inventors: Ryoji Nakayama, Takuo Takeshita, Tamotsu Ogawa
  • Patent number: 5261767
    Abstract: A boring bar tool for use with a tip is disclosed which has a tool body. The tip is mounted to one side of a forward end of the nose of the tool body. A neck is formed at a proximal end of the nose, and a shank in the form of a shaft is formed at a proximal end of the neck. The neck has a cross-sectional area in a plane perpendicular to an axis of the shank which is larger than the cross-sectional area of the shank in the plane.
    Type: Grant
    Filed: July 22, 1992
    Date of Patent: November 16, 1993
    Assignee: Mitsubishi Metal Corporation
    Inventors: Osamu Tsujimura, Masaaki Nakayama, Masayuki Okawa
  • Patent number: 5244871
    Abstract: An oxide superconductor comprises a composition represented by the composition formula: (Nd.sub.x --Ce.sub.y --L.sub.z).sub.2 CuO.sub.4-d (wherein L is an element selected from Ca and Mg, and x+y+z=1). The compositions of Nd, Ce and L of the oxide superconductor corresponds to a point falling inside an area of Nd--Ce--L ternary diagram surrounded by straight lines (A-B), (B-C), (C-D) and (D-A) connecting point (A) with point (B), point (B) with point (C), point (C) with point (D) and point (D) with point (A), respectively, the points (A), (B), (C) and (D) being points (x=1, y=0, z=0), (x=0.4, y=0.6, z=0), (x=0.4, y=0.3, z=0.3) and (x=0.1, y=0, z=0.9), respectively, in the Nd--Ce--L ternary diagram. Above-described Nd--Ce--L--Cu--O oxides can exhibit superconductivity within a wide range of composition when heat-treated in an atmosphere of nitrogen.
    Type: Grant
    Filed: October 9, 1991
    Date of Patent: September 14, 1993
    Assignees: Mitsubishi Metal Corporation, Hitachi, Ltd., International Superconductivity Technology Center
    Inventors: Takeshi Sakurai, Toru Yamashita, Hisao Yamauchi, Shoji Tanaka
  • Patent number: 5226404
    Abstract: A cutting apparatus comprises an endless chain body comprising a plurality of plate-like flaps connected to each other for angular movement in a common plane. Each flap has an end face on an inner peripheral side of the chain body, and at least a part of the flaps having a cutting device at the end face. The apparatus further comprises a plurality of sprockets supporting the chain body in tension, and defining a common plane of cut effected by the combination of the chain body and the sprockets. The chain body is supported by a rigid backplate, of thickness not greater than the thickness of the flaps. It provides a firm support to the rotating chain body to permit sliding movement of the chain body within the common plane of cut.
    Type: Grant
    Filed: June 19, 1992
    Date of Patent: July 13, 1993
    Assignee: Mitsubishi Metal Corporation
    Inventors: Katsumi Mogi, Hiro Ohzeki
  • Patent number: 5209216
    Abstract: A chain cutter comprises an endless chain body including a plurality of plate-like flaps connected to each other to provide angular movement in a common plane; each of the flaps has an end face on a inner peripheral side of said chain body, and at least a part of said flaps has a cutting device at the end face.
    Type: Grant
    Filed: March 12, 1992
    Date of Patent: May 11, 1993
    Assignee: Mitsubishi Metal Corporation
    Inventor: Katsumi Mogi
  • Patent number: 5204059
    Abstract: An Ni base alloy for use in spark plug electrodes for internal combustion engines which consists essentially of, on a weight percent basis,0.1 to 1.5% Si,0.1 to 0.65% Mn,3.1 to 5% Al,0 to 2% Cr,0 to 0.5% of one or more elements selected from the group consisting of Y and rare earth elements,0 to 5% Co,0 to 0.5% of Hf and/or Re, andthe remainder Ni and incidental impurities.
    Type: Grant
    Filed: December 9, 1991
    Date of Patent: April 20, 1993
    Assignee: Mitsubishi Metal Corporation
    Inventors: Kensho Sahira, Hideo Kitamura, Akira Mimura, Nobuyoshi Kurauchi
  • Patent number: 5156503
    Abstract: A boring bar tool for use with a tip is disclosed which has a tool body. The tip is mounted to one side of a forward end of the nose of the tool body. A neck is formed at a proximal end of the nose, and a shank in the form of a shaft is formed at a proximnal end of the neck. The neck has a cross-sectional area in a plane perpendicular to an axis of the shank which is larger than the cross-sectional area of the shank in the plane.
    Type: Grant
    Filed: June 26, 1990
    Date of Patent: October 20, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Osamu Tsujimura, Masaaki Nakayama, Masayuki Okawa
  • Patent number: 5130498
    Abstract: A ceramic substrate is used for an electric or electronic circuit comprises a ceramic plate formed of a substance mainly composed of aluminum nitride, and conductive islands formed of aluminum or an aluminum alloy and bonded to one surface of the ceramic plate for providing conductive paths to circuit components connected thereto, wherein the aluminum islands decrease the total weight of the ceramic substrate and enhance a resistance against repetition of a thermal stress.
    Type: Grant
    Filed: October 9, 1990
    Date of Patent: July 14, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Hideaki Yoshida, Yoshirou Kuromitsu, Makoto Toriumi, Michio Yuzawa
  • Patent number: 5122206
    Abstract: A precipitation strengthening type nickel base single crystal alloy, which consists essentially of, on a weight percent basis,10-30% chromium,0.1-5% niobium,0.1-8% titanium,0.1-8% aluminum,optionally one or more components selected from the group consisting of 0.1-3% tantalum, 0.05-0.5% copper, 0.05-3% hafnium, 0.05-3% rhenium, 0.05-3% molybdenum, 0.05-3% tungsten, 0.05-0.5% boron, 0.05-0.5% zirconium, andthe remainder being nickel and incidental impurities, and exhibits a narrow solidification temperature range.
    Type: Grant
    Filed: May 9, 1990
    Date of Patent: June 16, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Saburo Wakita, Junji Hoshi, Toshiyuki Shimamura, Akira Mitsuhashi, Toshio Yonezawa
  • Patent number: 5110543
    Abstract: A blade member for cutting-tools includes a cermet substrate which contains, apart from unavoidable impurities, a binder phase and a hard dispersed phase. The binder phase contains 5% to 30% by weight of cobalt and/or nickel. The hard dispersed phase contains a balance composite carbonitride of titanium and one or more of the elements tungsten, molybdenum, tantalum, niobium, hafnium and zirconium. The composite carbo-nitride satisfies the relationship 0.2.ltoreq.b/(a+b).ltoreq.0.7, where a and b denote atomic ratios of carbon and nitrogen, respectively. The substrate includes a hard surface layer in which the maximum hardness is present at a depth between 5 .mu.m and 50 .mu.m from a substrate surface thereof. The substrate surface has a hardness of 20% to 90% of the maximum hardness.
    Type: Grant
    Filed: July 19, 1991
    Date of Patent: May 5, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Niro Odani, Kazuyoshi Yoshioka, Sinichi Sekiya
  • Patent number: 5106821
    Abstract: A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.
    Type: Grant
    Filed: September 10, 1990
    Date of Patent: April 21, 1992
    Assignees: International Superconductivity Technology Center, OKI Electric Industry Co., Ltd., The Hokkaido Electric Power Company Inc., The Chugoku Electric Power Co., Inc., Mitsubishi Metal Corporation
    Inventors: Norio Homma, Hiromi Takahashi, Shinji Kawamoto, Hideyuki Kondo, Tadataka Horishita
  • Patent number: 5096768
    Abstract: An insulating substrate is used for fabrication of a thick film circuit and comprises a foundation of aluminum nitride and a surface film structure provided on the foundation, in which the foundation contains at least one oxidizing agent selected from the group consisting of an yttrium oxide and a calcium oxide ranging from 0.1% to 10% by weight for enhancing a stiffness of the foundation, and in which the surface film structure is of the multi-level surface film structure having a lower surface film of an aluminum oxide rapidly grown on the foundation in the presence of the oxidizing agent and an upper surface film containing a silicon oxide and a substance selected from the group consisting of a zirconium oxide, a titanium oxide and a boron oxide for enhancing the resistivity against a firing operation.
    Type: Grant
    Filed: February 5, 1990
    Date of Patent: March 17, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Yoshirou Kuromitsu, Hideaki Yoshida, Toshiyuki Nagase, Hiroto Uchida, Tadaharu Tanaka, Yoshio Kanda, Kenji Morinaga
  • Patent number: 5087509
    Abstract: An insulating substrate is used for fabrication of a thick film circuit provided with a conductive pattern made from a paste containing glass frits, and comprises a foundation containing an aluminum nitride and incidental impurities, and a multi-level surface film structure provided between the foundation and the conductive pattern and having a lower surface film of an aluminum oxide provided on a surface of the foundation, an intermediate surface film provided on the lower surface film and formed of a substance having a relatively small acidity and an upper surface film provided on the intermediate surface film and formed of a substance having a relatively large acidity, in which the substance with the large acidity rapidly reacts with the frits in a firing stage for enhancing the adhesion of the conductive pattern but the substance with the relatively small acidity restricts the consumption thereof, so that the total thickness of the multi-level film structure is decrased and, accordingly, the heat radiatio
    Type: Grant
    Filed: May 18, 1990
    Date of Patent: February 11, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Yoshirou Kuromitsu, Hideaki Yoshida, Toshiyuki Nagase, Tadaharu Tanaka, Yoshio Kanda
  • Patent number: 5085515
    Abstract: There is disclosed a method for inspecting a physical feature on a surface of a manufactured article. First, a sensor is provided adjacent to the article. Then, the surface of the article is sensed by the sensor while causing one of the sensor and the article to rotate about an axis perpendicular to the surface of the article, to thereby obtain a signal which has peaks corresponding to the physical feature on the surface of the article. Subsequently the signal is processed and the processed signal is analyzed based on the number of the peaks, to thereby obtain information as to the physical feature on the surface of the article. An inspection apparatus suitable for practicing the above-mentioned method is also disclosed.
    Type: Grant
    Filed: February 8, 1990
    Date of Patent: February 4, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Hajime Itoh, Atsuo Itow, Yoshihiro Inoue, Hiroshi Ishizaki
  • Patent number: 5078830
    Abstract: In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.
    Type: Grant
    Filed: March 9, 1990
    Date of Patent: January 7, 1992
    Assignee: Mitsubishi Metal Corporation
    Inventors: Keiji Shirata, Koichi Sassa, Kenji Tomizawa, Nobuyuki Uchida, Taizo Ohmura
  • Patent number: 5077269
    Abstract: A target used for forming a thin film of a quinary superconductive oxide contains metal copper ranging between about 8% and about 40% by volume dispersed into a quaternary or a quinary complex oxide, and the metal copper improves the thermal conductivity and the electrical conductivity of the target, so that cracks are less liable to take place in the target and the target is applicable to a d.c. sputtering system, thereby decreasing the production cost of the thin film.
    Type: Grant
    Filed: June 8, 1989
    Date of Patent: December 31, 1991
    Assignee: Mitsubishi Metal Corporation
    Inventors: Tadashi Sugihara, Yukihiro Ohuchi, Takuo Takeshita
  • Patent number: 5075200
    Abstract: A process of forming a superconductive wiring strip incorporates a deposition of a raw material on a mask layer followed by a lift-off stage for patterning the wiring strip, and the mask layer is formed for the miniature wiring strip by using lithographic techniques.
    Type: Grant
    Filed: August 24, 1989
    Date of Patent: December 24, 1991
    Assignee: Mitsubishi Metal Corporation
    Inventors: Tadashi Sugihara, Yoshio Murakami, Takuo Takeshita
  • Patent number: 5068148
    Abstract: A tool member includes a tungsten carbide based cemented carbide substrate and a diamond coating deposited on the substrate. The substrate has two diffraction peaks K.alpha..sub.1 and K.alpha..sub.2 indexed by index of pane (211) for tungsten carbide in X-ray diffraction. The peaks satisfy the relationship of 1.sub.1 /1.sub.2 .ltoreq.35, where 1.sub.1 and 1.sub.2 are heights of the peaks K.alpha..sub.1 and K.alpha..sub.2 measured from a base of a trough between the two diffraction peaks. For manufacturing the tool member, a green compact is first sintered to provide a tungsten carbide based cemented carbide substrate. Subsequently the substrate is ground and subsequently heat-treated at a temperature between 1000.degree. C. and 1600.degree. C. in a vacuum or in a non-oxidizing atmosphere. Thereafter, a diamond coating is formed on the substrate by vapor-deposition method.
    Type: Grant
    Filed: December 21, 1989
    Date of Patent: November 26, 1991
    Assignee: Mitsubishi Metal Corporation
    Inventors: Kei Nakahara, Keiichi Sakurai, Toshihiko Okamura, Hironori Yoshimura, Hiroyuki Eto, Noribumi Kikuchi
  • Patent number: 5066381
    Abstract: A target unit includes a backing plate and a target member disposed on the backing plate. The target member includes at least one erosion member of a sputtering material and at least one holding member for releasably holding the erosion member on the backing plate.
    Type: Grant
    Filed: October 24, 1990
    Date of Patent: November 19, 1991
    Assignees: Sharp Kabushiki Kaisha, Mitsubishi Metal Corporation
    Inventors: Kenji Ohta, Yoshiteru Murakami, Nobuyuki Takamori, Kenichi Hijikata, Takyuki Shingyoji, Kazushige Takaishi