Abstract: A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled.
Type:
Grant
Filed:
November 20, 2001
Date of Patent:
November 18, 2003
Assignees:
Mitsubishi Materials Silicon Corporation, Mitsubishi Silicon America Corporation
Inventors:
Volker R. Todt, Rocky Oakley, Peter Wildes, Fritz Kirscht, Haresh Siriwardane, Joel Kearns