Abstract: Upon a transient analysis simulation, if a time step between calculation points is relatively small, a forced quit error occurs, which leads to deterioration of development efficiency. A voltage v.sub.n at a calculation point t.sub.n is obtained by solving a circuit equation. A change rate in the voltage v.sub.n in a step [t.sub.n-1, t.sub.n ] is assumed to be maintained in another step [t.sub.n, t.sub.n+1 ], and a calculation point t.sub.n+1 is temporarily determined so that v.sub.n+1 -v.sub.n is equal to a predetermined value .DELTA.v. The step t.sub.n+1 -t.sub.n is then judged if it falls within a dynamic range of a computer. If the step does not fall within the dynamic range, the calculation point t.sub.n is moved backward by a predetermined decrement, and the procedure is re-performed. If t.sub.n+1 -t.sub.n falls within the dynamic range, a voltage at the calculation point t.sub.n+1 is calculated.

Abstract: In order to modify the composition of a non-azeotropic mixed refrigerant circulating through the refrigeration cycle of a refrigerating and air-conditioning apparatus using a refrigerant rectifier column, the level of the liquid refrigerant rich in the low-boiling point fraction that is obtained from a refrigerant rectifier column (11) and which collects in a refrigerant container (14), as well as the level of the liquid refrigerant rich in the high-boiling point fraction that collects in an accumulator (6) are adjusted so as to modify the composition of the refrigerant circulating through the refrigeration cycle. The circuit structure can be made simple, and the energy need not be supplied during the cooling and heating operations to modify the composition of the non-azeotropic mixed refrigerant.

Abstract: A method for producing a thin film solar cell includes preparing a substrate of a low purity material and having opposed front and rear surfaces; forming an insulating film on the front surface of the substrate; forming a second conductivity type active layer of a high purity material on the insulating film with a front surface exposed; forming a second conductivity type semiconductor region within the active layer, reaching the front surface, to produce a p-n junction for light-to-electricity conversion; forming an anti-reflection film on the front surface of the active layer, the anti-reflection film reducing reflection of incident light; forming a surface electrode in contact with the front surface of the active layer; adhering the front surface side of the active layer to a supporting plate and selectively etching the low purity substrate from the rear surface to form a supporting substrate supporting the active layer; and forming a rear electrode on the rear surface of the supporting substrate contacting