Abstract: Disclosed herein is a fluorescence measuring apparatus capable of more accurately measuring fluorescence emitted when an object to be measured is irradiated with laser light. The apparatus for measuring fluorescence emitted when an object to be measured is irradiated with laser light includes: a laser light source that irradiates the object to be measured with laser light; a first light-receiving unit that receives scattered light emitted when the object to be measured is irradiated with the laser light; a second light-receiving unit that receives fluorescence emitted when the object to be measured is irradiated with the laser light; and a signal processing unit that assigns a weight to a signal of the fluorescence received by the second light-receiving unit depending on an intensity of the scattered light received by the first light-receiving unit.

Abstract: A fluorescence detection device generates a modulation signal for modulating the intensity of the laser light and modulates the laser light using the modulation signal. The detection device obtains a fluorescent signal of the fluorescence emitted by the measurement object irradiated with the laser light, and calculates, from the fluorescent signal, a fluorescence intensity and the phase delay of the fluorescence with respect to the modulation signal. At the time, the detection device controls the operation amounts of the signal level of a DC component of the modulation signal and the gain of amplification just after the output of the fluorescent signal so that the value of a fluorescence intensity signal falls within a preset range. After the operation amounts are settled, the detection device calculates the fluorescence intensity and then calculates the fluorescence relaxation time of the fluorescence emitted by the measurement object using the phase delay.

Abstract: Problem to be Solved The present invention is made in view of the above-described circumstances. An object of the present invention is to provide a sunlight collecting system achieving suppression of power generation cost with the receiver which enables suppressing the manufacturing, transportation and construction costs, facilitating recovery work in the case of occurrence of a failure, and promptly recovering a heating medium circulating inside the receiver in an emergency.

Abstract: A fluorescence detecting device generates a modulation signal for modulating an intensity of laser light and modulates the laser light by using the modulation signal, when receiving fluorescence emitted by a measurement object irradiated with laser light emitted from a laser light source unit. The fluorescence detecting device obtains a fluorescent signal of the fluorescence emitted by the measurement object irradiated with the laser light and calculates, from the fluorescent signal, the phase delay of the fluorescence with respect to the modulation signal. At the time, the fluorescence detecting device controls the frequency of the modulation signal so that the value of the phase delay comes close to a preset value. The fluorescence detecting device calculates the fluorescence relaxation time of the fluorescence emitted by the measurement object by using a phase delay obtained under the condition of frequency of the modulation signal at the time when the control is settled.

Abstract: A liquid sample flow containing living cells is irradiated with measurement laser light and the photo data of at least either scattering light or fluorescence that is generated by each of the living cells in the liquid sample flow due to the irradiation with the measurement laser light is acquired. Based on the photo data thus acquired, it is determined whether each of the cells assignable to the respective photo data is an unnecessary living cell or a target living cell. Based on the determination results, a pulse voltage is then applied exclusively to the living cells having been determined as unnecessary living cells so that the unnecessary living cells are damaged and killed.

Abstract: A light absorption examining device includes a laser light source that emits the pulse laser beam, a measuring unit that retains the measuring object and irradiates the measuring object with the pulse laser beam, a light receiving unit that receives the pulse laser beam transmitted through the measuring object and outputs a light receiving signal, a pulse generator that produces a single rectangular pulse at a time when a signal level of the light receiving signal output from the light receiving unit intersects a set threshold, a laser driver that supplies the produced rectangular pulse to the laser light source to emit the pulse laser beam, and a control/processing unit that determines an accumulated delay time and examines absorption of the pulse laser beam by the measuring object using the determined accumulated delay time, the accumulated delay time representing a delay in a production timing of the rectangular pulse.

Abstract: When FRET efficiency is measured quantitatively by removing uncertain elements of fluorescence detection information, calibration information prestored in a storage means while including at least the leak rate of donor fluorescence component emitted from a donor molecule, the leak rate of acceptor fluorescence component emitted from an acceptor molecule, and the non-FRET fluorescence lifetime of the donor fluorescence component when FRET is not generated out of the fluorescence of a measurement object sample is acquired. The FRET fluorescence lifetime of the donor fluorescence component is then determined using the intensity information and phase information of fluorescence of the measurement object sample, the leak rate of donor fluorescence component and the leak rate of acceptor fluorescence component, thus determining the FRET fluorescence efficiency.

Abstract: An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.

Abstract: The direction of a solar light tracking sensor is set easily with high accuracy. A solar light tracking guide (35) is installed on the optical axis (11) of the reflected light collected by a heliostat (2). An optical telescope (47) is so attached to the rear end part of the guide (35) as to be aligned with the guide axis (C) of the guide (35). The posture of the solar light tracking guide (35) is so adjusted that a cross provided in the field of view of the telescope (47) agrees with the center (10a) of the light collection target position and fixed to the base (38). Then, a solar light tracking sensor (12) is fastened to the rear end part of the guide (35) in place of the optical telescope (47).

Abstract: An atomic layer deposition apparatus that forms a thin film on a substrate, the atomic layer deposition apparatus includes: a deposition vessel in which a source gas supply port and a reactant gas supply port are formed; a source gas supply part operable to supply the source gas to the source gas supply port and that includes a liquid source storage part and a vaporization controller, the liquid source storage part storing a liquid source that is a source material of the thin film, and the vaporization controller controlling a flow rate by directly vaporizing the liquid source stored in the liquid source storage part; a reactant gas supply part operable to supply a reactant gas to the reactant gas supply port, the reactant gas reacting with the source gas to form the thin film; a controller operable to control the source gas supply part and the reactant gas supply part to supply the source gas and the reactant gas alternately; a screen plate that is disposed such that the source gas supplied from the source g

Abstract: To provide an induction heating apparatus that employs a batch-type heating system for heating a large-diameter wafer and can perform uniform heating with a high precision, an induction heating apparatus (10) that heats an inductive-heating target member using a magnetic flux generated from a solenoid-type induction heating coil (18) and heats a wafer (40) using the heat generated from the inductive-heating target member, wherein a plurality of inductive-heating target members 14 (14a, 14b, and 14c) of which principal surface is arranged perpendicularly to a core axis direction of the induction heating coil (18) are interspersed. In the induction heating apparatus (10) described above, a susceptor (12) may be configured by housing the inductive-heating target member (14) in a single holder (16) made of a member having magnetic permeability and heat conductivity.

Abstract: A plasma generating apparatus includes a linear electrode for generating a high voltage by resonance caused when the linear electrode is supplied with an AC signal current, an grounded electrode for defining an internal space spaced from the linear electrode around the linear electrode, and a control device for controlling the power feed to the linear electrode. The control device has a field probe for measuring the electric field in the internal space, and a bandpass filter for filtering the measurement signal into a predetermined frequency band to output an AC signal, a variable phase shifter for shifting the phase of the AC signal so that the AC signal is synchronized with the resonance signal in the internal space when the AC signal is supplied to the linear electrode as a current, and an amplifier for amplifying the AC signal of which the phase is shifted.

Abstract: Provided are a method and a device for efficiently decomposing gas hydrate pellets and extracting gas. That is, provided is a method for decomposing gas hydrate characterized by supplying gas hydrate pellets to a decomposition vessel, damming and gathering densely the pellets on a downstream side in the decomposition vessel, and passing hot water through this pellet layer which is in a densely gathered state, to thereby decompose the pellets into water and gas.

Abstract: Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (1), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (2), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer (2) has a high-frequency loss smaller than that of the first silicon carbide layer (1), the first silicon carbide layer (1) has a thermal conductivity higher than that of the second silicon carbide layer (2), and on the surface side of the second silicon carbide layer (2), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.

Abstract: Provided is a power supply system including a crane and a power supply truck. In the power supply system, a linkage mechanism efficiently transmits a force in a travel direction x to the power supply truck, while not transmitting any force in a transverse direction y or a twisting direction, and has a highly durable configuration. In a power supply system 1 for a crane in which a crane 2 for loading and unloading a container for marine transportation is linked to a power supply truck 3 for supplying power while following the crane 2, with a linkage mechanism 4, the linkage mechanism 4 includes a receiving member 10 disposed on the power supply truck 3, and a pushing member 11 disposed on the crane 2.

Abstract: To enable long-term continuous operation by preventing blocking of a reaction pipe line disposed in a multi-pipe or double-walled-pipe heat exchanger, provided is a device for producing gas hydrate including a multi-pipe or double-walled-pipe device 1 for generating gas hydrate having a reaction pipe line 2 for flowing raw material water w and raw material gas g and a coolant circulation region 3 for circulating a coolant c and thereby cooling the reaction pipe line 2, wherein a coil spring 4 extending in the longitudinal direction of the reaction pipe line 2 is provided in the reaction pipe line 2.

Abstract: Provided is a process and an apparatus for producing at low cost gas hydrate pellets having an excellent storability. A gas hydrate generated from a raw-material gas and raw-material water is dewatered and simultaneously molded into pellets with compression-molding means under conditions suitable for generating the gas hydrate while the gas hydrate is generated from the raw-material gas and the raw-material water that exist among particles of the gas hydrate.

Abstract: A gasification apparatus is provided which enables gas hydrate pellets to be transported and gasified in the same vessel and enables a gas to be generated by pellet decomposition in a controlled amount. The apparatus is free from bridging. The apparatus includes a heat-in-saluted vessel main body and, disposed therein, a tubular structure which is open at the top and bottom. This tubular structure holds therein gas hydrate pellets obtained by compression-molding a gas hydrate produced by the hydration reaction of a raw-material gas with raw-material water. The tubular structure becomes wider in diameter from the upper opening toward the lower opening. A channel for passing a heat carrier therethrough has been disposed between the lower end of the tubular structure and the inner bottom surface of the vessel main body.

Abstract: A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.

Abstract: A semiconductor substrate thermal treatment apparatus enables excellent heating control in suppressing influence of mutual induction between induction heating coils even when the induction heating coils are arranged in the vertical direction while providing horizontal magnetic flux to susceptors. The apparatus indirectly heats wafers mounted on horizontally-arranged susceptors including induction heating coils to form alternate-current magnetic flux in a direction parallel to a mount face of the susceptor. The wafer are arranged at an outer circumferential side of the susceptor. The induction heating coils are structured with at least one main heating coil and subordinate heating coils electromagnetically coupled with the main heating coil.