Abstract: There is provided a nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption. The nonvolatile semiconductor memory device comprises an insulating layer 3b with electric insulation, wherein, a charge retention layer 3 formed adjacent to a tunnel insulating film 2 contains nano-particles 3a comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12 to 10+14 particles per square centimeter.

Abstract: A three-dimensional semiconductor integrated circuit apparatus which permits ready electrical connection and is resistant to deformation and easy to fabricate and a manufacturing method therefor are provided. A second semiconductor substrate is stacked over a third semiconductor substrate, and a first semiconductor substrate is stacked over the second semiconductor substrate. A second integrated circuit is formed over the surface layer of the second semiconductor substrate, and the integrated circuit side of the second semiconductor substrate is bonded to the integrated circuit side of the first semiconductor substrate, resulting in the electrical connection of the first integrated circuit formed over the surface layer of the first semiconductor substrate and the second integrated circuit.