Abstract: A tantalum thin film circuit which is formed on an insulator or semiconductor substrate through an adhesive layer, a part or the entire surface of said tantalum thin film circuit being coated with a metal selected from among palladium, gold, platinum and rhodium or an alloy thereof. In addition, a conductive film circuit is formed on the thus formed tantalum thin film circuit by forming an interlayer insulating film having an adhesive layer on each of the upper and lower sides thereof, and forming a circuit using a metal selected from among tantalum, palladium, gold, platinum and rhodium or an alloy thereof.