Abstract: During a CMP operation, vibration-caused variations in the forces holding a wafer against a polishing pad, and/or relatively moving the pad and the wafer are measured and the standard deviation thereof is used to minimize or eliminate the deleterious effects of the vibrations.
Abstract: A device (28) and method for detecting endpoints (Ep1, Ep2) of a chemical-mechanical polishing (CMP) process for semiconductor wafers (14). A carrier current signal driving a polishing carrier motor is received and detected, the carrier current signal is modified, and the modified carrier current is analyzed to detect at least one endpoint of the polishing process. The device (28) includes a detector (40), a logic circuit (42) and storage (44).
Abstract: During a CMP operation, vibration-caused variations in the forces holding a wafer against a polishing pad, and/or relatively moving the pad and the wafer are measured and the standard deviation thereof is used to minimize or eliminate the deleterious effects of the vibrations.