Patents Assigned to Monolithic System Technology
  • High density SRAM circuit with single-ended memory cells
    Patent number: 5265047
    Abstract: A high density, static random access memory (SRAM) circuit with single-ended memory cells employs a plurality of (4T-2R) or (6T) type SRAM cells and a regenerative sense amplifier. Each of the SRAM cells employs a single bit-line (BL) and two word lines.
    Type: Grant
    Filed: March 9, 1992
    Date of Patent: November 23, 1993
    Assignee: Monolithic System Technology
    Inventors: Wingyu Leung, Fu-Chieh Hsu